Abstract
Polycrystalline thin films of Zn 2SnO 4 were deposited by rf magnetron sputtering onto glass substrates. Films were characterized by θ-2θ x-ray diffraction and by 119Sn conversion electron Mössbauer spectroscopy. The films were randomly oriented in a cubic spinel structure. Comparison of x-ray diffraction peak intensities with structure-factor-calculated peak intensities confirmed that the films were in an inverse spinel configuration. Mössbauer studies detected two distinct Sn 4+ octahedral sites. These distinct sites may be induced by distortions in the lattice associated with equally distinct Zn 2+ octahedral sites. A model is suggested to explain that the relatively low electron mobility of Zn 2SnO 4 may be associated with disorder on the cation octahedral sites. This may disrupt transport between edge-sharing d 10s 0 electronically configured cations.
Original language | American English |
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Pages (from-to) | 1464-1471 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 91 |
Issue number | 3 |
DOIs | |
State | Published - 2002 |
NREL Publication Number
- NREL/JA-520-30394