Abstract
In this study we combine scanning electron microscopy (SEM)-based cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction (EBSD) in order to map the spatial distribution of various atomic-level defects in CdTe films as a function of deposition and film processing. Two different deposition techniques were used. Lattice-matched, epitaxial CdTe films were deposited on a single crystal as well as on polycrystalline CdTe substrates by molecular beam epitaxy (MBE). For comparison purposes, polycrystalline CdTe films were deposited using our standard close-spaced sublimation (CSS) method on glass-based substrates.
Original language | American English |
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Pages | 2003-2006 |
Number of pages | 4 |
DOIs | |
State | Published - 2013 |
Event | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013 |
Conference
Conference | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 |
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Country/Territory | United States |
City | Tampa, FL |
Period | 16/06/13 → 21/06/13 |
NREL Publication Number
- NREL/CP-5200-57901
Keywords
- Cathodoluminescence
- CdTe
- CSS
- Electron backscatter diffraction
- Grain boundaries
- MBE
- Thin-film solar cells