Structural Instability of Sn-Doped In2O3 Thin Films During Thermal Annealing at Low Temperature

Yanfa Yan, J. Zhou, X. Z. Wu, H. R. Moutinho, M. M. Al-Jassim

Research output: Contribution to journalArticlepeer-review

10 Scopus Citations

Abstract

We report on observations of structural stability of Sn-doped In2O3 (ITO) thin films during thermal annealing at low temperature. The ITO thin films were deposited by radio-frequency magnetron sputtering at room temperature. Transmission electron microscopy analysis revealed that the as-deposited ITO thin films are nanocrystalline. After thermal annealing in a He atmosphere at 250 °C for 30 min, recrystallization, coalescence, and agglomeration of grains were observed. We further found that nanovoids formed in the annealed ITO thin films. The majority of the nanovoids are distributed along the locations of the original grain boundaries. These nanovoids divide the agglomerated larger grains into small coherent domains.

Original languageAmerican English
Pages (from-to)6686-6690
Number of pages5
JournalThin Solid Films
Volume515
Issue number17
DOIs
StatePublished - 2007

NREL Publication Number

  • NREL/JA-520-39713

Keywords

  • InO
  • Instability
  • TEM
  • Thermal annealing

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