Structure Property Relationships in Gallium Oxide Thin Films Grown by Pulsed Laser Deposition

Lauren Garten, Andriy Zakutayev, Paul Ndione, David Ginley, Brian Gorman, John Perkins

Research output: Contribution to journalArticlepeer-review

20 Scopus Citations

Abstract

Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (-201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.

Original languageAmerican English
Pages (from-to)348-353
Number of pages6
JournalMRS Communications
Volume6
Issue number4
DOIs
StatePublished - 1 Dec 2016

Bibliographical note

Publisher Copyright:
© Materials Research Society 2016.

NREL Publication Number

  • NREL/JA-5K00-67538

Keywords

  • gallium oxide
  • optoelectronics
  • thin films

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