Structure Property Relationships in Gallium Oxide Thin Films Grown by Pulsed Laser Deposition

Lauren Garten; Andriy Zakutayev; Paul Ndione; David Ginley; Brian Gorman; John Perkins

doi:10.1557/mrc.2016.50

Structure Property Relationships in Gallium Oxide Thin Films Grown by Pulsed Laser Deposition

Lauren Garten, Andriy Zakutayev, Paul Ndione, David Ginley, Brian Gorman, John Perkins

Colorado School of Mines

Research output: Contribution to journal › Article › peer-review

25 Scopus Citations

Abstract

Beta-gallium oxide (β-Ga₂O₃) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga₂O₃ films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga₂O₃ films on (0001) sapphire and (-201) Ga₂O₃ single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga₂O₃ from 350 to 550 °C.

Original language	American English
Pages (from-to)	348-353
Number of pages	6
Journal	MRS Communications
Volume	6
Issue number	4
DOIs	https://doi.org/10.1557/mrc.2016.50 https://doi.org/10.1557/mrc.2016.50
State	Published - 1 Dec 2016

Bibliographical note

Publisher Copyright:
© Materials Research Society 2016.

NREL Publication Number

NREL/JA-5K00-67538

Keywords

gallium oxide
optoelectronics
thin films

Access to Document

Cite this

@article{a6e3c87c0c4245b880057e1279fe52f3,

title = "Structure Property Relationships in Gallium Oxide Thin Films Grown by Pulsed Laser Deposition",

abstract = "Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (-201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.",

keywords = "gallium oxide, optoelectronics, thin films",

author = "Lauren Garten and Andriy Zakutayev and Paul Ndione and David Ginley and Brian Gorman and John Perkins",

note = "Publisher Copyright: {\textcopyright} Materials Research Society 2016.",

year = "2016",

month = dec,

day = "1",

doi = "10.1557/mrc.2016.50",

language = "American English",

volume = "6",

pages = "348--353",

journal = "MRS Communications",

issn = "2159-6859",

publisher = "Springer International Publishing AG",

number = "4",

}

TY - JOUR

T1 - Structure Property Relationships in Gallium Oxide Thin Films Grown by Pulsed Laser Deposition

AU - Garten, Lauren

AU - Zakutayev, Andriy

AU - Ndione, Paul

AU - Ginley, David

AU - Gorman, Brian

AU - Perkins, John

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (-201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.

AB - Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (-201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.

KW - gallium oxide

KW - optoelectronics

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=84996995655&partnerID=8YFLogxK

U2 - 10.1557/mrc.2016.50

DO - 10.1557/mrc.2016.50

M3 - Article

AN - SCOPUS:84996995655

SN - 2159-6859

VL - 6

SP - 348

EP - 353

JO - MRS Communications

JF - MRS Communications

IS - 4

ER -

Structure Property Relationships in Gallium Oxide Thin Films Grown by Pulsed Laser Deposition

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this