Studies of Band Structure and Free-Carrier Scattering in Transparent Conducting Oxides Based on Combined Measurements of Electron Transport Phenomena

Studies of Band Structure and Free-Carrier Scattering in Transparent Conducting Oxides Based on Combined Measurements of Electron Transport Phenomena

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Abstract

Experimental methods are discussed for studying band structure, effective mass, and other electronic properties relevant to mobility, including scattering mechanisms, relaxation time, and the influence of grain boundaries (GBs) in polycrystalline transparent conducting oxide (TCO) films. Impedance spectroscopy permits evaluation of the GB potential barrier height and density-of-states. Thesestudies enable an estimate of the limiting mobility achievable for practical transparent conducting oxides to be made. The equipment for measurement of the four transport coefficients is discussed, and examples of its application to films of ZnO, SnO2, and Cd2SnO4 are given.

Original language	American English
Number of pages	23
State	Published - 2000
Event	Materials Research Society Workshop - Denver, Colorado Duration: 19 Jun 2000 → 20 Jun 2000

Conference

Conference	Materials Research Society Workshop
City	Denver, Colorado
Period	19/06/00 → 20/06/00

NREL Publication Number

NREL/CP-520-29064

Access to Document

https://www.nrel.gov/docs/fy01osti/29064.pdf

Cite this

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title = "Studies of Band Structure and Free-Carrier Scattering in Transparent Conducting Oxides Based on Combined Measurements of Electron Transport Phenomena",

abstract = "Experimental methods are discussed for studying band structure, effective mass, and other electronic properties relevant to mobility, including scattering mechanisms, relaxation time, and the influence of grain boundaries (GBs) in polycrystalline transparent conducting oxide (TCO) films. Impedance spectroscopy permits evaluation of the GB potential barrier height and density-of-states. Thesestudies enable an estimate of the limiting mobility achievable for practical transparent conducting oxides to be made. The equipment for measurement of the four transport coefficients is discussed, and examples of its application to films of ZnO, SnO2, and Cd2SnO4 are given.",

author = "NREL",

year = "2000",

language = "American English",

note = "Materials Research Society Workshop ; Conference date: 19-06-2000 Through 20-06-2000",

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T1 - Studies of Band Structure and Free-Carrier Scattering in Transparent Conducting Oxides Based on Combined Measurements of Electron Transport Phenomena

AU - NREL, null

PY - 2000

Y1 - 2000

N2 - Experimental methods are discussed for studying band structure, effective mass, and other electronic properties relevant to mobility, including scattering mechanisms, relaxation time, and the influence of grain boundaries (GBs) in polycrystalline transparent conducting oxide (TCO) films. Impedance spectroscopy permits evaluation of the GB potential barrier height and density-of-states. Thesestudies enable an estimate of the limiting mobility achievable for practical transparent conducting oxides to be made. The equipment for measurement of the four transport coefficients is discussed, and examples of its application to films of ZnO, SnO2, and Cd2SnO4 are given.

AB - Experimental methods are discussed for studying band structure, effective mass, and other electronic properties relevant to mobility, including scattering mechanisms, relaxation time, and the influence of grain boundaries (GBs) in polycrystalline transparent conducting oxide (TCO) films. Impedance spectroscopy permits evaluation of the GB potential barrier height and density-of-states. Thesestudies enable an estimate of the limiting mobility achievable for practical transparent conducting oxides to be made. The equipment for measurement of the four transport coefficients is discussed, and examples of its application to films of ZnO, SnO2, and Cd2SnO4 are given.

M3 - Paper

T2 - Materials Research Society Workshop

Y2 - 19 June 2000 through 20 June 2000

ER -

Studies of Band Structure and Free-Carrier Scattering in Transparent Conducting Oxides Based on Combined Measurements of Electron Transport Phenomena

Abstract

Conference

NREL Publication Number

Access to Document

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Cite this