Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005

Research output: NRELSubcontract Report

Abstract

This report describes basic issues behind CdTe/CdS cell performance and stability, such as the nature and electronic properties of impurities and defects that control the majority carrier concentration, mechanisms of dopant compensation, recombination processes, their nature and properties, migration and transformation of defects under various processing, stress, and operating conditions. Webelieve that a better basic understanding of the specific influence of grain boundaries, especially for fine-grain materials such as those making up CdTe-based cells, is now one of the most important issues we must address. We need to clarify the role of grain boundaries in forming the film electronic properties, as well as those of the p-n junction.
Original languageAmerican English
Number of pages132
StatePublished - 2007

Bibliographical note

Work performed by Colorado School of Mines, Golden, Colorado

NREL Publication Number

  • NREL/SR-520-41129

Keywords

  • admittance spectroscopy
  • capacitance transients
  • charge injection spectroscopy
  • chemical bath deposition (CBD)
  • deep electronic states
  • electrodeposition
  • electroluminescence
  • gas-jet system
  • gas-transport deposition
  • grain boundaries (GBS)
  • optimization
  • photoluminescence
  • post-deposition annealing
  • scanning tunneling microscopy (STM)

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