Abstract
This report discusses the results of probing the defect structure and bonding of hydrogenated amorphous silicon films using both nuclear magnetic resonance (NMR) and electron spin resonance (ESR). The doping efficiency of boron in a-Si:H was found to be less than 1%, with 90% of the boron in a threefold coordinated state. On the other hand, phosphorus NMR chemical shift measurements yielded aratio of threefold to fourfold P sites of roughly 4 to 1. Various resonance lines were observed in heavily boron- and phosphorus- doped films and a-SiC:H alloys. These lines were attributed to band tail states on twofold coordinated silicon.
Original language | American English |
---|---|
Number of pages | 48 |
State | Published - 1984 |
Bibliographical note
Work performed by Naval Research Laboratory, Electronics Technology Division, Washington, DCNREL Publication Number
- NREL/STR-211-2393
Keywords
- boron
- crystal defects
- electron spin resonance (ESR)
- nuclear magnetic resonance (NMR)
- photovoltaic
- solar energy