Studies of Hydrogenated Amorphous Silicon: A Contract Report

    Research output: NRELSubcontract Report


    This report discusses the results of probing the defect structure and bonding of hydrogenated amorphous silicon films using both nuclear magnetic resonance (NMR) and electron spin resonance (ESR). The doping efficiency of boron in a-Si:H was found to be less than 1%, with 90% of the boron in a threefold coordinated state. On the other hand, phosphorus NMR chemical shift measurements yielded aratio of threefold to fourfold P sites of roughly 4 to 1. Various resonance lines were observed in heavily boron- and phosphorus- doped films and a-SiC:H alloys. These lines were attributed to band tail states on twofold coordinated silicon.
    Original languageAmerican English
    Number of pages48
    StatePublished - 1984

    Bibliographical note

    Work performed by Naval Research Laboratory, Electronics Technology Division, Washington, DC

    NREL Publication Number

    • NREL/STR-211-2393


    • boron
    • crystal defects
    • electron spin resonance (ESR)
    • nuclear magnetic resonance (NMR)
    • photovoltaic
    • solar energy


    Dive into the research topics of 'Studies of Hydrogenated Amorphous Silicon: A Contract Report'. Together they form a unique fingerprint.

    Cite this