Studies of Recrystallization of CdTe Thin Films After CdCl2 Treatment

H. R. Moutinho, M. M. Al-Jassim, F. A. Abulfotuh, D. H. Levi, P. C. Dippo, R. G. Dhere, L. L. Kazmerski

Research output: Contribution to conferencePaperpeer-review

54 Scopus Citations


CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl2 at 350° and 400 °C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 °C CdCl2 treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVD films treated at 400 °C were completely recrystallized and grain growth was observed. The formation of Cd(S1-xTex) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl2 treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 °C, probably due to elimination of deep levels within the band gap.

Original languageAmerican English
Number of pages4
StatePublished - 1997
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: 29 Sep 19973 Oct 1997


ConferenceProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
CityAnaheim, CA, USA

Bibliographical note

For preprint version, including full text online document, see NREL/CP-523-22944

NREL Publication Number

  • NREL/CP-520-25049


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