Studies of Recrystallization of CdTe Thin Films After CdCl2 Treatment

H. R. Moutinho; M. M. Al-Jassim; F. A. Abulfotuh; D. H. Levi; P. C. Dippo; R. G. Dhere; L. L. Kazmerski

doi:10.1109/PVSC.1997.654120

Studies of Recrystallization of CdTe Thin Films After CdCl2 Treatment

H. R. Moutinho, M. M. Al-Jassim, F. A. Abulfotuh, D. H. Levi, P. C. Dippo, R. G. Dhere, L. L. Kazmerski

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

54 Scopus Citations

Abstract

CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl₂ at 350° and 400 °C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 °C CdCl₂ treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVD films treated at 400 °C were completely recrystallized and grain growth was observed. The formation of Cd(S_1-xTe_x) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl₂ treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 °C, probably due to elimination of deep levels within the band gap.

Original language	American English
Pages	431-434
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654120
State	Published - 1997
Event	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
City	Anaheim, CA, USA
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-523-22944

NREL Publication Number

NREL/CP-520-25049

Access to Document

10.1109/PVSC.1997.654120

Cite this

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title = "Studies of Recrystallization of CdTe Thin Films After CdCl2 Treatment",

abstract = "CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl2 at 350° and 400 °C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 °C CdCl2 treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVD films treated at 400 °C were completely recrystallized and grain growth was observed. The formation of Cd(S1-xTex) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl2 treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 °C, probably due to elimination of deep levels within the band gap.",

author = "Moutinho, {H. R.} and Al-Jassim, {M. M.} and Abulfotuh, {F. A.} and Levi, {D. H.} and Dippo, {P. C.} and Dhere, {R. G.} and Kazmerski, {L. L.}",

note = "For preprint version, including full text online document, see NREL/CP-523-22944; Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654120",

language = "American English",

pages = "431--434",

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T1 - Studies of Recrystallization of CdTe Thin Films After CdCl2 Treatment

AU - Moutinho, H. R.

AU - Al-Jassim, M. M.

AU - Abulfotuh, F. A.

AU - Levi, D. H.

AU - Dippo, P. C.

AU - Dhere, R. G.

AU - Kazmerski, L. L.

N1 - For preprint version, including full text online document, see NREL/CP-523-22944

PY - 1997

Y1 - 1997

N2 - CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl2 at 350° and 400 °C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 °C CdCl2 treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVD films treated at 400 °C were completely recrystallized and grain growth was observed. The formation of Cd(S1-xTex) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl2 treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 °C, probably due to elimination of deep levels within the band gap.

AB - CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl2 at 350° and 400 °C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 °C CdCl2 treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVD films treated at 400 °C were completely recrystallized and grain growth was observed. The formation of Cd(S1-xTex) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl2 treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 °C, probably due to elimination of deep levels within the band gap.

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U2 - 10.1109/PVSC.1997.654120

DO - 10.1109/PVSC.1997.654120

M3 - Paper

AN - SCOPUS:0031388378

SP - 431

EP - 434

T2 - Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Studies of Recrystallization of CdTe Thin Films After CdCl2 Treatment

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