Studies of Recrystallization of CdTe Thin Films After CdCl2 Treatment

Research output: Contribution to conferencePaper

Abstract

CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl 2 at 350 and 400 deg. C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 deg. C CdCl 2 treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVDfilms treated at 400?C were completely recrystallized and grain growth was observed. The formation of Cd(S 1-x Te x ) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl 2treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 deg. C, probably due to elimination of deep levels within the band gap.
Original languageAmerican English
Number of pages5
StatePublished - 1997
Event26th IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997

Conference

Conference26th IEEE Photovoltaic Specialists Conference
CityAnaheim, California
Period29/09/973/10/97

NREL Publication Number

  • NREL/CP-523-22944

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