Abstract
CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl 2 at 350 and 400 deg. C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 deg. C CdCl 2 treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVDfilms treated at 400?C were completely recrystallized and grain growth was observed. The formation of Cd(S 1-x Te x ) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl 2treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 deg. C, probably due to elimination of deep levels within the band gap.
| Original language | American English |
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| Number of pages | 5 |
| State | Published - 1997 |
| Event | 26th IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997 |
Conference
| Conference | 26th IEEE Photovoltaic Specialists Conference |
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| City | Anaheim, California |
| Period | 29/09/97 → 3/10/97 |
NREL Publication Number
- NREL/CP-523-22944