Studies of the Electrical and Interface Properties of the Metal Contacts to CuInSe2 Single Crystals

F. A. Abou-Elfotouh; L. L. Kazmerski; R. J. Matson; D. J. Dunlavy; T. J. Coutts

doi:10.1116/1.576573

Studies of the Electrical and Interface Properties of the Metal Contacts to CuInSe2 Single Crystals

F. A. Abou-Elfotouh, L. L. Kazmerski, R. J. Matson, D. J. Dunlavy, T. J. Coutts

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

14 Scopus Citations

Abstract

The electrical behavior of the metal contacts and ITQ and CdS junctions to single crystals of CuInSe₂has been studied using I-V and electron beam induced current measurements, then correlated to the chemical composition and intrinsic defect states in the semiconductor. The results have indicated that the contact resistance, junction characteristics, and crystalline order of surfaces are controlled mainly by the type and relative concentration of the intrinsic defect states dominating the copper-indium-deselenide material; these states are very sensitive to heat treatments and surface preparation procedures. Correlation between the behavior of different samples (polycrystalline thin films or single crystals) should be based upon similarities in the type and relative concentration instead of the chemical composition.

Original language	American English
Pages (from-to)	3251-3254
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	8
Issue number	4
DOIs	https://doi.org/10.1116/1.576573 https://doi.org/10.1116/1.576573
State	Published - Jul 1990

NREL Publication Number

ACNR/JA-213-11882

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abstract = "The electrical behavior of the metal contacts and ITQ and CdS junctions to single crystals of CuInSe2has been studied using I-V and electron beam induced current measurements, then correlated to the chemical composition and intrinsic defect states in the semiconductor. The results have indicated that the contact resistance, junction characteristics, and crystalline order of surfaces are controlled mainly by the type and relative concentration of the intrinsic defect states dominating the copper-indium-deselenide material; these states are very sensitive to heat treatments and surface preparation procedures. Correlation between the behavior of different samples (polycrystalline thin films or single crystals) should be based upon similarities in the type and relative concentration instead of the chemical composition.",

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AU - Abou-Elfotouh, F. A.

AU - Kazmerski, L. L.

AU - Matson, R. J.

AU - Dunlavy, D. J.

AU - Coutts, T. J.

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AB - The electrical behavior of the metal contacts and ITQ and CdS junctions to single crystals of CuInSe2has been studied using I-V and electron beam induced current measurements, then correlated to the chemical composition and intrinsic defect states in the semiconductor. The results have indicated that the contact resistance, junction characteristics, and crystalline order of surfaces are controlled mainly by the type and relative concentration of the intrinsic defect states dominating the copper-indium-deselenide material; these states are very sensitive to heat treatments and surface preparation procedures. Correlation between the behavior of different samples (polycrystalline thin films or single crystals) should be based upon similarities in the type and relative concentration instead of the chemical composition.

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Studies of the Electrical and Interface Properties of the Metal Contacts to CuInSe2 Single Crystals

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