Study of a-Si:H/c-Si Heterojunctions for PV Applications

    Research output: Contribution to conferencePaper


    a-Si:H/c-Si heterojunction diodes were produced by PECVD with varying amorphous silicon layer thickness and hydrogen dilution of the gas phase. An accurate determination of the growth rate also in the initial stages of the deposition was made possible by an original chemical method based on the dissolution of the films followed by spectroscopical analysis of the obtained solution. The electricalcharacterization of the diodes confirms the generation - recombination - multitunneling nature of the transport. Although H2 dilution is important, however, beyond a certain level it is detrimental for the junction quality, probably due to the transition to a microcrystalline phase deposition. Solar cells were also produced, the best results being an open circuit voltage of 610 mV and anintrinsic efficiency of 14.2%.
    Original languageAmerican English
    Number of pages6
    StatePublished - 1996
    EventAmorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California
    Duration: 8 Apr 199612 Apr 1996


    ConferenceAmorphous Silicon Technology 1996: Materials Research Society Symposium
    CitySan Francisco, California

    NREL Publication Number

    • NREL/CP-23015


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