Abstract
We have prepared thin-film CdTe/CdS solar cells using CdTe deposited by close-spaced sublimation (CSS), at a temperature much lower (∼450°C) than the one used in the conventional process (620°C). The CdTe films were treated with the usual CdCl2 dipping process or with a new process using vapor CdC12. The vapor process was much more effective in the recrystallization process, and for the first time we observed extensive diffusion of S into CSS CdTe films. We found a direct correlation between the photoluminescence lifetime of the minority carriers and the efficiency-related parameters of the cells. The best cell produced in this work used low-temperature CdTe films treated by vapor and had an efficiency of 11.9 %, higher than in cells prepared using high-temperature CdTe films, which shows the potential of this new process to fabricate high-efficiency solar cells.
Original language | American English |
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Pages | 646-649 |
Number of pages | 4 |
DOIs | |
State | Published - 2000 |
Event | 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 15 Sep 2000 → 22 Sep 2000 |
Conference
Conference | 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 |
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Country/Territory | United States |
City | Anchorage |
Period | 15/09/00 → 22/09/00 |
Bibliographical note
Publisher Copyright:© 2000 IEEE.
NREL Publication Number
- NREL/CP-520-28927