Abstract
Thermophotovoltaic (TPV) systems have recently rekindled a high level of interest for a number of applications. In order to meet the requirement of low-temperature (approx. 1000 deg. C) TPV systems, 0.6-eV Ga0.32In0.68As/InAs0.32P0.68 TPV monolithically interconnected modules (MIMs) have been developed at the National Renewable Energy Laboratory (NREL). The successful fabrication of Ga0.32In0.68As/InAs0.32P0.68 MIMs depends on developing and optimizing of several key processes. Some results regarding the chemical vapor deposition (CVD)-SiO2 insulating layer, selective chemical etch via sidewall profiles, double-layer antireflection coatings, and metallization via interconnects have prefiously been given elsewhere. In this paper, we report on the study of contacts and back-surfacereflectors.
| Original language | American English |
|---|---|
| Number of pages | 10 |
| State | Published - 1998 |
| Event | Fourth NREL Conference on Thermophotovoltaic Generation of Electricity - Denver, Colorado Duration: 11 Oct 1998 → 14 Oct 1998 |
Conference
| Conference | Fourth NREL Conference on Thermophotovoltaic Generation of Electricity |
|---|---|
| City | Denver, Colorado |
| Period | 11/10/98 → 14/10/98 |
NREL Publication Number
- NREL/CP-520-25489
