Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

Emily Warren; William Nemeth; David Young; Pauls Stradins; Abhijit Kale; Emily Beese; Theresa Saenz; Alexander Marshall; Karine Florent; Santosh Kurinec; Sumit Agarwal

doi:10.1109/PVSC.2016.7750190

Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

Emily Warren, William Nemeth, David Young, Pauls Stradins, Abhijit Kale, Emily Beese, Theresa Saenz, Alexander Marshall, Karine Florent, Santosh Kurinec, Sumit Agarwal

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

7 Scopus Citations

Abstract

NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

Original language	American English
Pages	2913-2916
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2016.7750190 https://doi.org/10.1109/PVSC.2016.7750190
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

NREL/CP-5J00-67947

Keywords

annealing
films
nickel alloys
silicides
silicon
x-ray scattering

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Warren, E., Nemeth, W., Young, D., Stradins, P., Kale, A., Beese, E., Saenz, T., Marshall, A., Florent, K., Kurinec, S., & Agarwal, S. (2016). Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells. 2913-2916. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. https://doi.org/10.1109/PVSC.2016.7750190, https://doi.org/10.1109/PVSC.2016.7750190

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abstract = "NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.",

keywords = "annealing, films, nickel alloys, silicides, silicon, x-ray scattering",

author = "Emily Warren and William Nemeth and David Young and Pauls Stradins and Abhijit Kale and Emily Beese and Theresa Saenz and Alexander Marshall and Karine Florent and Santosh Kurinec and Sumit Agarwal",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750190",

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Warren, E , Nemeth, W , Young, D , Stradins, P, Kale, A, Beese, E, Saenz, T, Marshall, A, Florent, K, Kurinec, S & Agarwal, S 2016, 'Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 2913-2916. https://doi.org/10.1109/PVSC.2016.7750190, https://doi.org/10.1109/PVSC.2016.7750190

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T1 - Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

AU - Warren, Emily

AU - Nemeth, William

AU - Young, David

AU - Stradins, Pauls

AU - Kale, Abhijit

AU - Beese, Emily

AU - Saenz, Theresa

AU - Marshall, Alexander

AU - Florent, Karine

AU - Kurinec, Santosh

AU - Agarwal, Sumit

PY - 2016/11/18

Y1 - 2016/11/18

N2 - NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

AB - NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

KW - annealing

KW - films

KW - nickel alloys

KW - silicides

KW - silicon

KW - x-ray scattering

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DO - 10.1109/PVSC.2016.7750190

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SP - 2913

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T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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