Study of Ordered Domains in Ga0.5In0.5P Grown by MOVPE

Jane G. Zhu; D. J. Friedman; M. M. Al-Jassim; J. M. Olson

Study of Ordered Domains in Ga0.5In0.5P Grown by MOVPE

Jane G. Zhu, D. J. Friedman, M. M. Al-Jassim, J. M. Olson

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

Atomic ordering in III-V alloys is known to influence the physical properties of these materials. Therefore, the understanding and the control of the formation of ordered alloys are very important. In this study, the ordered domains in Ga_0.5In_0.5P layers are investigated using transmission electron microscopy (TEM) and selected-area diffraction. The samples were grown on misoriented (100) GaAs substrates by metalorganic vapor phase epitaxy. The layer thicknesses range from 1.5 to 12 μm. Plan-view specimens were prepared by chemical etching from the substrate sides and examined using a Philips CM 30 microscope operated at 300 kV.

Original language	American English
Pages	812-813
Number of pages	2
State	Published - 1993
Event	Proceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA Duration: 1 Aug 1993 → 6 Aug 1993

Conference

Conference	Proceedings of the 51st Annual Meeting Microscopy Society of America
City	Cincinnati, OH, USA
Period	1/08/93 → 6/08/93

NREL Publication Number

NREL/CP-412-5441

Cite this

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title = "Study of Ordered Domains in Ga0.5In0.5P Grown by MOVPE",

abstract = "Atomic ordering in III-V alloys is known to influence the physical properties of these materials. Therefore, the understanding and the control of the formation of ordered alloys are very important. In this study, the ordered domains in Ga0.5In0.5P layers are investigated using transmission electron microscopy (TEM) and selected-area diffraction. The samples were grown on misoriented (100) GaAs substrates by metalorganic vapor phase epitaxy. The layer thicknesses range from 1.5 to 12 μm. Plan-view specimens were prepared by chemical etching from the substrate sides and examined using a Philips CM 30 microscope operated at 300 kV.",

author = "Zhu, {Jane G.} and Friedman, {D. J.} and Al-Jassim, {M. M.} and Olson, {J. M.}",

year = "1993",

language = "American English",

pages = "812--813",

note = "Proceedings of the 51st Annual Meeting Microscopy Society of America ; Conference date: 01-08-1993 Through 06-08-1993",

}

TY - CONF

T1 - Study of Ordered Domains in Ga0.5In0.5P Grown by MOVPE

AU - Zhu, Jane G.

AU - Friedman, D. J.

AU - Al-Jassim, M. M.

AU - Olson, J. M.

PY - 1993

Y1 - 1993

N2 - Atomic ordering in III-V alloys is known to influence the physical properties of these materials. Therefore, the understanding and the control of the formation of ordered alloys are very important. In this study, the ordered domains in Ga0.5In0.5P layers are investigated using transmission electron microscopy (TEM) and selected-area diffraction. The samples were grown on misoriented (100) GaAs substrates by metalorganic vapor phase epitaxy. The layer thicknesses range from 1.5 to 12 μm. Plan-view specimens were prepared by chemical etching from the substrate sides and examined using a Philips CM 30 microscope operated at 300 kV.

AB - Atomic ordering in III-V alloys is known to influence the physical properties of these materials. Therefore, the understanding and the control of the formation of ordered alloys are very important. In this study, the ordered domains in Ga0.5In0.5P layers are investigated using transmission electron microscopy (TEM) and selected-area diffraction. The samples were grown on misoriented (100) GaAs substrates by metalorganic vapor phase epitaxy. The layer thicknesses range from 1.5 to 12 μm. Plan-view specimens were prepared by chemical etching from the substrate sides and examined using a Philips CM 30 microscope operated at 300 kV.

UR - http://www.scopus.com/inward/record.url?scp=0027708167&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0027708167

SP - 812

EP - 813

T2 - Proceedings of the 51st Annual Meeting Microscopy Society of America

Y2 - 1 August 1993 through 6 August 1993

ER -

Study of Ordered Domains in Ga0.5In0.5P Grown by MOVPE

Abstract

Conference

NREL Publication Number

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