Study of the CdS/CuIn(Ga)Se2 Interface in Thin Film Solar Cells

Research output: Contribution to conferencePaper

Abstract

In this paper we describe our research efforts directed towards the understanding of the CdS/CuInGaSe2 junctions and, specifically, the interaction of the chemical bath with the CuInGaSe2 (CIGS). We find that Cd and S diffuse into the absorber during the CdS growth. Heating the absorbers in Cd partial baths resulted in a significant improvement in the ZnO/CIGS device properties. Photoluminescencemeasurements indicate that the effect of Cd is very similar to that of CBD CdS.
Original languageAmerican English
Pages121-126
Number of pages6
StatePublished - 1998
EventThin-Film Structures for Photovoltaics: Materials Research Society Symposium - Boston, Massachusetts
Duration: 2 Dec 19975 Dec 1997

Conference

ConferenceThin-Film Structures for Photovoltaics: Materials Research Society Symposium
CityBoston, Massachusetts
Period2/12/975/12/97

NREL Publication Number

  • NREL/CP-520-25605

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