Study of the Defect Levels, Electrooptics, and Interface Properties of Polycrystalline CdTe and CdS Thin Films and Their Junction

F. A. Abulfotuh; A. Balcioglu; T. Wangensteen; H. R. Moutinho; F. Hassoon; A. Al-Douri; A. Alnajjar; L. L. Kazmerski

doi:10.1109/PVSC.1997.654125

Study of the Defect Levels, Electrooptics, and Interface Properties of Polycrystalline CdTe and CdS Thin Films and Their Junction

F. A. Abulfotuh, A. Balcioglu, T. Wangensteen, H. R. Moutinho, F. Hassoon, A. Al-Douri, A. Alnajjar, L. L. Kazmerski

Materials Science

Research output: Contribution to conference › Paper › peer-review

11 Scopus Citations

Abstract

In this study, the electrical behavior of CdS/CdTe junctions was investigated using deep-level transient spectroscopy (DLTS) and capacitance-voltage (c-v) measurements. The results were then correlated to chemical composition and optical properties (measured by wavelength-scanning ellipsometery) of the CdTe film and the dominant defect states were determined by photoluminescence (PL) emission measured before and after post-deposition CdCl₂ treatments. CdTe films used in this study were prepared by electrochemical deposition (ED), close-spaced sublimation (CSS), and physical vapor deposition (PVD). The chemical and heat treatments are shown to decrease Cd-vacancy levels (PL measurements) and quench majority-carrier deep traps. These treatments, which determine various parameters crucial to the device performance such as the type and concentration of the dominant defects and deep levels, greatly affect the device performance by controlling open-circuit voltage.

Original language	American English
Pages	451-454
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654125 https://doi.org/10.1109/PVSC.1997.654125
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-530-23522

NREL Publication Number

NREL/CP-520-25072

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Cite this

Abulfotuh, F. A., Balcioglu, A., Wangensteen, T., Moutinho, H. R., Hassoon, F., Al-Douri, A., Alnajjar, A., & Kazmerski, L. L. (1997). Study of the Defect Levels, Electrooptics, and Interface Properties of Polycrystalline CdTe and CdS Thin Films and Their Junction. 451-454. Paper presented at Twenty Sixth IEEE Photovoltaic Specialists Conference, Anaheim, California. https://doi.org/10.1109/PVSC.1997.654125, https://doi.org/10.1109/PVSC.1997.654125

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title = "Study of the Defect Levels, Electrooptics, and Interface Properties of Polycrystalline CdTe and CdS Thin Films and Their Junction",

abstract = "In this study, the electrical behavior of CdS/CdTe junctions was investigated using deep-level transient spectroscopy (DLTS) and capacitance-voltage (c-v) measurements. The results were then correlated to chemical composition and optical properties (measured by wavelength-scanning ellipsometery) of the CdTe film and the dominant defect states were determined by photoluminescence (PL) emission measured before and after post-deposition CdCl2 treatments. CdTe films used in this study were prepared by electrochemical deposition (ED), close-spaced sublimation (CSS), and physical vapor deposition (PVD). The chemical and heat treatments are shown to decrease Cd-vacancy levels (PL measurements) and quench majority-carrier deep traps. These treatments, which determine various parameters crucial to the device performance such as the type and concentration of the dominant defects and deep levels, greatly affect the device performance by controlling open-circuit voltage.",

author = "Abulfotuh, {F. A.} and A. Balcioglu and T. Wangensteen and Moutinho, {H. R.} and F. Hassoon and A. Al-Douri and A. Alnajjar and Kazmerski, {L. L.}",

note = "For preprint version, including full text online document, see NREL/CP-530-23522; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654125",

language = "American English",

pages = "451--454",

}

Abulfotuh, FA, Balcioglu, A, Wangensteen, T, Moutinho, HR, Hassoon, F, Al-Douri, A, Alnajjar, A & Kazmerski, LL 1997, 'Study of the Defect Levels, Electrooptics, and Interface Properties of Polycrystalline CdTe and CdS Thin Films and Their Junction', Paper presented at Twenty Sixth IEEE Photovoltaic Specialists Conference, Anaheim, California, 29/09/97 - 3/10/97 pp. 451-454. https://doi.org/10.1109/PVSC.1997.654125, https://doi.org/10.1109/PVSC.1997.654125

TY - CONF

T1 - Study of the Defect Levels, Electrooptics, and Interface Properties of Polycrystalline CdTe and CdS Thin Films and Their Junction

AU - Abulfotuh, F. A.

AU - Balcioglu, A.

AU - Wangensteen, T.

AU - Moutinho, H. R.

AU - Hassoon, F.

AU - Al-Douri, A.

AU - Alnajjar, A.

AU - Kazmerski, L. L.

N1 - For preprint version, including full text online document, see NREL/CP-530-23522

PY - 1997

Y1 - 1997

N2 - In this study, the electrical behavior of CdS/CdTe junctions was investigated using deep-level transient spectroscopy (DLTS) and capacitance-voltage (c-v) measurements. The results were then correlated to chemical composition and optical properties (measured by wavelength-scanning ellipsometery) of the CdTe film and the dominant defect states were determined by photoluminescence (PL) emission measured before and after post-deposition CdCl2 treatments. CdTe films used in this study were prepared by electrochemical deposition (ED), close-spaced sublimation (CSS), and physical vapor deposition (PVD). The chemical and heat treatments are shown to decrease Cd-vacancy levels (PL measurements) and quench majority-carrier deep traps. These treatments, which determine various parameters crucial to the device performance such as the type and concentration of the dominant defects and deep levels, greatly affect the device performance by controlling open-circuit voltage.

AB - In this study, the electrical behavior of CdS/CdTe junctions was investigated using deep-level transient spectroscopy (DLTS) and capacitance-voltage (c-v) measurements. The results were then correlated to chemical composition and optical properties (measured by wavelength-scanning ellipsometery) of the CdTe film and the dominant defect states were determined by photoluminescence (PL) emission measured before and after post-deposition CdCl2 treatments. CdTe films used in this study were prepared by electrochemical deposition (ED), close-spaced sublimation (CSS), and physical vapor deposition (PVD). The chemical and heat treatments are shown to decrease Cd-vacancy levels (PL measurements) and quench majority-carrier deep traps. These treatments, which determine various parameters crucial to the device performance such as the type and concentration of the dominant defects and deep levels, greatly affect the device performance by controlling open-circuit voltage.

UR - http://www.scopus.com/inward/record.url?scp=0031348538&partnerID=8YFLogxK

U2 - 10.1109/PVSC.1997.654125

DO - 10.1109/PVSC.1997.654125

M3 - Paper

AN - SCOPUS:0031348538

SP - 451

EP - 454

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Abulfotuh FA, Balcioglu A, Wangensteen T, Moutinho HR, Hassoon F, Al-Douri A et al.. Study of the Defect Levels, Electrooptics, and Interface Properties of Polycrystalline CdTe and CdS Thin Films and Their Junction. 1997. Paper presented at Twenty Sixth IEEE Photovoltaic Specialists Conference, Anaheim, California. doi: 10.1109/PVSC.1997.654125, 10.1109/PVSC.1997.654125

Study of the Defect Levels, Electrooptics, and Interface Properties of Polycrystalline CdTe and CdS Thin Films and Their Junction

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