Study of the Initial Oxidation of Polycrystalline Si Using Surface Analysis Techniques

L. L. Kazmerski, O. Jamjoum, P. J. Ireland, R. L. Whitney

Research output: Contribution to journalArticlepeer-review

16 Scopus Citations


The initial oxidation of polycrystalline Si is investigated in order to determine differences in oxide growth at grains and grain boundaries. Auger electron spectroscopy is used to spatially resolve the surface oxidation that has been performed in situ in the UHV analysis chamber under controlled temperature and pressure conditions. Angular-resolved x-ray photoelectron spectroscopy provides information on the composition and thickness of the oxides. The transition layer between the SiO//2 and Si is estimated to be in the range of 4-15 A, depending upon the region in which it is measured. Comparison of these angular-resolved XPS data are made between single grain and grain boundary regions.

Original languageAmerican English
Pages (from-to)960-964
Number of pages5
JournalJournal of vacuum science & technology
Issue number3
StatePublished - 1980
Externally publishedYes
EventProc of the Natl Symp of the Am Vac Soc, 27th, Pt 2 - Detroit, MI, Engl
Duration: 13 Oct 198017 Oct 1980

NREL Publication Number

  • ACNR/JA-213-3820


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