Study of the Initial Oxidation of Polycrystalline Si Using Surface Analysis Techniques

L. L. Kazmerski; O. Jamjoum; P. J. Ireland; R. L. Whitney

doi:10.1116/1.570964

Study of the Initial Oxidation of Polycrystalline Si Using Surface Analysis Techniques

L. L. Kazmerski, O. Jamjoum, P. J. Ireland, R. L. Whitney

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Abstract

The initial oxidation of polycrystalline Si is investigated in order to determine differences in oxide growth at grains and grain boundaries. Auger electron spectroscopy is used to spatially resolve the surface oxidation that has been performed in situ in the UHV analysis chamber under controlled temperature and pressure conditions. Angular-resolved x-ray photoelectron spectroscopy provides information on the composition and thickness of the oxides. The transition layer between the SiO//2 and Si is estimated to be in the range of 4-15 A, depending upon the region in which it is measured. Comparison of these angular-resolved XPS data are made between single grain and grain boundary regions.

Original language	American English
Pages (from-to)	960-964
Number of pages	5
Journal	Journal of vacuum science & technology
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.570964 https://doi.org/10.1116/1.570964
State	Published - 1980
Externally published	Yes
Event	Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 2 - Detroit, MI, Engl Duration: 13 Oct 1980 → 17 Oct 1980

NREL Publication Number

ACNR/JA-213-3820

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abstract = "The initial oxidation of polycrystalline Si is investigated in order to determine differences in oxide growth at grains and grain boundaries. Auger electron spectroscopy is used to spatially resolve the surface oxidation that has been performed in situ in the UHV analysis chamber under controlled temperature and pressure conditions. Angular-resolved x-ray photoelectron spectroscopy provides information on the composition and thickness of the oxides. The transition layer between the SiO//2 and Si is estimated to be in the range of 4-15 A, depending upon the region in which it is measured. Comparison of these angular-resolved XPS data are made between single grain and grain boundary regions.",

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year = "1980",

doi = "10.1116/1.570964",

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AU - Kazmerski, L. L.

AU - Jamjoum, O.

AU - Ireland, P. J.

AU - Whitney, R. L.

PY - 1980

Y1 - 1980

N2 - The initial oxidation of polycrystalline Si is investigated in order to determine differences in oxide growth at grains and grain boundaries. Auger electron spectroscopy is used to spatially resolve the surface oxidation that has been performed in situ in the UHV analysis chamber under controlled temperature and pressure conditions. Angular-resolved x-ray photoelectron spectroscopy provides information on the composition and thickness of the oxides. The transition layer between the SiO//2 and Si is estimated to be in the range of 4-15 A, depending upon the region in which it is measured. Comparison of these angular-resolved XPS data are made between single grain and grain boundary regions.

AB - The initial oxidation of polycrystalline Si is investigated in order to determine differences in oxide growth at grains and grain boundaries. Auger electron spectroscopy is used to spatially resolve the surface oxidation that has been performed in situ in the UHV analysis chamber under controlled temperature and pressure conditions. Angular-resolved x-ray photoelectron spectroscopy provides information on the composition and thickness of the oxides. The transition layer between the SiO//2 and Si is estimated to be in the range of 4-15 A, depending upon the region in which it is measured. Comparison of these angular-resolved XPS data are made between single grain and grain boundary regions.

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M3 - Article

AN - SCOPUS:0018999401

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EP - 964

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IS - 3

T2 - Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 2

Y2 - 13 October 1980 through 17 October 1980

ER -

Study of the Initial Oxidation of Polycrystalline Si Using Surface Analysis Techniques

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