Abstract
We present an in situ attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy study of the passivation mechanism in the surface passivation of Si solar cells by Al2O3 thin films deposited via atomic layer deposition (ALD) using TMA and O3 as precursors. The IR measurements suggest that during the annealing stage, the Si-H bonding near the interface decreases. We have used D-terminated c-Si internal-reflection crystals to differentiate the residual H atoms that may migrate from ALD Al2O3 films versus the residual D atoms present at the Al2O3/c-Si interface after ALD. Within the sensitivity of the ATR-FTIR spectroscopy setup of ∼1012 cm-2 for Si-H bonds, we do not detect any migration of H from Al2O3 to the c-Si interface. Therefore, we conclude that the migration of O, and the subsequent restructuring of the interface during the annealing step, primarily contributes toward the chemical passivation of the Al2O3/c-Si interface.
Original language | American English |
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Pages | 582-585 |
Number of pages | 4 |
DOIs | |
State | Published - 15 Oct 2014 |
Event | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014 |
Conference
Conference | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 |
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Country/Territory | United States |
City | Denver |
Period | 8/06/14 → 13/06/14 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
NREL Publication Number
- NREL/CP-5J00-61341
Keywords
- charge-carrier lifetime
- dielectric films
- photovoltaic cells
- silicon
- thin-film devices