Studying Early Time HWCVD Growth of a-Si:H by Real Time Spectroscopic Ellipsometry

Dean Levi, Brent P. Nelson, Robert Reedy

Research output: Contribution to journalArticlepeer-review

3 Scopus Citations


We have applied real time spectroscopic ellipsometry and secondary ion mass spectrometry to study the growth of amorphous silicon by hot-wire chemical vapor deposition. Differences in temperature and hydrogen content affect the optical properties of the film. These effects provide valuable insight into the growth process. We have compared a-Si:H films grown at two different temperatures to better understand these effects. Our studies reveal the presence of a distinct 100-200-thick layer at the top of the growing film. The properties of this layer are primarily determined by the ambient conditions in the growth chamber and appear relatively independent of substrate temperature. In contrast, the properties of the bulk of the film are strongly influenced by substrate temperature. These results imply that differences in film properties associated with substrate temperature are the result of subsurface reconstruction and diffusion processes.

Original languageAmerican English
Pages (from-to)20-23
Number of pages4
JournalThin Solid Films
Issue number1-2
StatePublished - 2003
EventProceedings of the Second International Conference on CAT-CVD - Denver, CO, United States
Duration: 10 Sep 200213 Sep 2002

NREL Publication Number

  • NREL/JA-520-34995


  • Hot-wire deposition
  • Hydrogenated amorphous silicon
  • In situ
  • Spectroscopic ellipsometry


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