Sub-Bandgap Features in CdSeTe Solar Cells: Parsing the Roles of Material Properties and Cell Optics

Arthur Onno, Siming Li, Carey Reich, Adam Danielson, William Weigand, Walajabad Sampath, Darius Kuciauskas, Zachary Holman

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations

Abstract

In this contribution, we investigate why different dopant species and back-contact architectures lead to different sub-bandgap behaviors in CdSeTe solar cells. Through extraction of the absorptance from photoluminescence spectra, we parse the contributions from material properties and from cell optics. We show that, as expected, arsenic doping leads to an increase in sub-bandgap features over traditional copper doping, and that this is a material property of arsenic-doped CdSeTe. Conversely, the increase in sub-bandgap absorption and emission using alternative back contact architectures can be attributed to the cell optics, and more specifically to the increased reflectance of the back interface, leading to at least a doubling of the pathlength for sub-bandgap photons.

Original languageAmerican English
Pages1754-1757
Number of pages4
DOIs
StatePublished - 20 Jun 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: 20 Jun 202125 Jun 2021

Conference

Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale
Period20/06/2125/06/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

  • NREL/CP-5900-80316

Keywords

  • arsenic doping
  • cadmium selenide telluride
  • photoluminescence
  • sub-bandgap features

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