Substrate Preparation Effects on Defect Density in Molecular Beam Epitaxial Growth of CdTe on CdTe (100) and (211)B

Craig Perkins, Teresa Barnes, George Burton, David Diercks, Olanrewaju Ogedengbe, Pathiraja Jayathilaka, Madhavie Edirisooriya, Alice Wang, Thomas Myers, Brian Gorman

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1 Scopus Citations


Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth of films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.

Original languageAmerican English
Article number041208
Number of pages6
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Issue number4
StatePublished - 1 Jul 2017

Bibliographical note

Publisher Copyright:
© 2017 American Vacuum Society.

NREL Publication Number

  • NREL/JA-5K00-69005


  • epitaxy
  • materials treatment
  • metalloids
  • semiconductors
  • thin film deposition


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