TY - JOUR
T1 - Substrate Preparation Effects on Defect Density in Molecular Beam Epitaxial Growth of CdTe on CdTe (100) and (211)B
AU - Perkins, Craig
AU - Barnes, Teresa
AU - Burton, George
AU - Diercks, David
AU - Ogedengbe, Olanrewaju
AU - Jayathilaka, Pathiraja
AU - Edirisooriya, Madhavie
AU - Wang, Alice
AU - Myers, Thomas
AU - Gorman, Brian
N1 - Publisher Copyright:
© 2017 American Vacuum Society.
PY - 2017/7/1
Y1 - 2017/7/1
N2 - Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth of films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.
AB - Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth of films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.
KW - epitaxy
KW - materials treatment
KW - metalloids
KW - semiconductors
KW - thin film deposition
UR - http://www.scopus.com/inward/record.url?scp=85024907924&partnerID=8YFLogxK
U2 - 10.1116/1.4994553
DO - 10.1116/1.4994553
M3 - Article
AN - SCOPUS:85024907924
SN - 2166-2746
VL - 35
JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
IS - 4
M1 - 041208
ER -