Abstract
Using junction capacitance methods, we describe the effect of contacts on charge emission transients in n-type hydrogenated amorphous silicon. The results demonstrate some of the difficulties encountered in observing and interpreting anomalous temperature independent emission transients ('slow relaxation').
| Original language | American English |
|---|---|
| Pages | 685-690 |
| Number of pages | 6 |
| State | Published - 1996 |
| Event | Amorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 12 Apr 1996 |
Conference
| Conference | Amorphous Silicon Technology 1996: Materials Research Society Symposium |
|---|---|
| City | San Francisco, California |
| Period | 8/04/96 → 12/04/96 |
NREL Publication Number
- NREL/CP-23007