Sulfur Hexafluoride (SF6) as Fluorine Dopant Precursor for Production of Fluorine Doped Tin Oxide Films by MOCVD

Carrie Wyse; Robert Torres; Teresa Barnes; Marty Scott; Matt Young; Xiaonan Li; Tim Gessert

doi:10.1109/pvsc.2009.5411291

Sulfur Hexafluoride (SF6) as Fluorine Dopant Precursor for Production of Fluorine Doped Tin Oxide Films by MOCVD

Carrie Wyse, Robert Torres, Teresa Barnes, Marty Scott, Matt Young, Xiaonan Li, Tim Gessert

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

SF₆ was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO₂:F). SnO₂:F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH ₃)₄) and O₂ with SF₆ between 500°C and 650°C and 10-65 mol% SF₆. These were compared to un-doped SnO₂ and SnO₂:F grown with CBrF₃. SF₆ required higher thermal activation than CBrF₃. High electron mobility (∼40 cm²N-s) and low resistance (6.5×10^-3 Ω-cm) were achieved with SF⁶ at ≥600°C. at 550°C and below, mobility was on the order of 4 cm ²N-s. Carrier concentrations were on the order of 10¹⁹ cm^-3, compared to 10²⁰ cm^-3 for CBrF ₃ doped films. Optical transmission, reflectance and absorption spectra demonstrated transmittance of 80% in the visible spectrum. XRD showed SF₆ generated films of different crystal structure than CBrF ₃. SIMS Showed a uniform F concentration of 1.5×10¹⁹ atom/cm³ from SF₆, but SF₆ did not incorporate as much F into the films as CBrF₃ (7.5×10²⁰ atoms/cm³). Sulfur contamination was not found.

Original language	American English
Pages	2435-2438
Number of pages	4
DOIs	https://doi.org/10.1109/pvsc.2009.5411291 https://doi.org/10.1109/PVSC.2009.5411291
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	7/06/09 → 12/06/09

NREL Publication Number

NREL/CP-520-46005

Keywords

basic sciences
materials science

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Wyse, C., Torres, R., Barnes, T., Scott, M., Young, M., Li, X., & Gessert, T. (2009). Sulfur Hexafluoride (SF6) as Fluorine Dopant Precursor for Production of Fluorine Doped Tin Oxide Films by MOCVD. 2435-2438. Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States. https://doi.org/10.1109/pvsc.2009.5411291, https://doi.org/10.1109/PVSC.2009.5411291

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title = "Sulfur Hexafluoride (SF6) as Fluorine Dopant Precursor for Production of Fluorine Doped Tin Oxide Films by MOCVD",

abstract = "SF6 was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO2:F). SnO2:F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH 3)4) and O2 with SF6 between 500°C and 650°C and 10-65 mol% SF6. These were compared to un-doped SnO2 and SnO2:F grown with CBrF3. SF6 required higher thermal activation than CBrF3. High electron mobility (∼40 cm2N-s) and low resistance (6.5×10-3 Ω-cm) were achieved with SF6 at ≥600°C. at 550°C and below, mobility was on the order of 4 cm 2N-s. Carrier concentrations were on the order of 1019 cm-3, compared to 1020 cm-3 for CBrF 3 doped films. Optical transmission, reflectance and absorption spectra demonstrated transmittance of 80% in the visible spectrum. XRD showed SF6 generated films of different crystal structure than CBrF 3. SIMS Showed a uniform F concentration of 1.5×1019 atom/cm3 from SF6, but SF6 did not incorporate as much F into the films as CBrF3 (7.5×1020 atoms/cm3). Sulfur contamination was not found.",

keywords = "basic sciences, materials science",

author = "Carrie Wyse and Robert Torres and Teresa Barnes and Marty Scott and Matt Young and Xiaonan Li and Tim Gessert",

year = "2009",

doi = "10.1109/pvsc.2009.5411291",

language = "American English",

pages = "2435--2438",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Wyse, C, Torres, R, Barnes, T, Scott, M, Young, M, Li, X & Gessert, T 2009, 'Sulfur Hexafluoride (SF6) as Fluorine Dopant Precursor for Production of Fluorine Doped Tin Oxide Films by MOCVD', Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 7/06/09 - 12/06/09 pp. 2435-2438. https://doi.org/10.1109/pvsc.2009.5411291, https://doi.org/10.1109/PVSC.2009.5411291

TY - CONF

T1 - Sulfur Hexafluoride (SF6) as Fluorine Dopant Precursor for Production of Fluorine Doped Tin Oxide Films by MOCVD

AU - Wyse, Carrie

AU - Torres, Robert

AU - Barnes, Teresa

AU - Scott, Marty

AU - Young, Matt

AU - Li, Xiaonan

AU - Gessert, Tim

PY - 2009

Y1 - 2009

N2 - SF6 was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO2:F). SnO2:F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH 3)4) and O2 with SF6 between 500°C and 650°C and 10-65 mol% SF6. These were compared to un-doped SnO2 and SnO2:F grown with CBrF3. SF6 required higher thermal activation than CBrF3. High electron mobility (∼40 cm2N-s) and low resistance (6.5×10-3 Ω-cm) were achieved with SF6 at ≥600°C. at 550°C and below, mobility was on the order of 4 cm 2N-s. Carrier concentrations were on the order of 1019 cm-3, compared to 1020 cm-3 for CBrF 3 doped films. Optical transmission, reflectance and absorption spectra demonstrated transmittance of 80% in the visible spectrum. XRD showed SF6 generated films of different crystal structure than CBrF 3. SIMS Showed a uniform F concentration of 1.5×1019 atom/cm3 from SF6, but SF6 did not incorporate as much F into the films as CBrF3 (7.5×1020 atoms/cm3). Sulfur contamination was not found.

AB - SF6 was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO2:F). SnO2:F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH 3)4) and O2 with SF6 between 500°C and 650°C and 10-65 mol% SF6. These were compared to un-doped SnO2 and SnO2:F grown with CBrF3. SF6 required higher thermal activation than CBrF3. High electron mobility (∼40 cm2N-s) and low resistance (6.5×10-3 Ω-cm) were achieved with SF6 at ≥600°C. at 550°C and below, mobility was on the order of 4 cm 2N-s. Carrier concentrations were on the order of 1019 cm-3, compared to 1020 cm-3 for CBrF 3 doped films. Optical transmission, reflectance and absorption spectra demonstrated transmittance of 80% in the visible spectrum. XRD showed SF6 generated films of different crystal structure than CBrF 3. SIMS Showed a uniform F concentration of 1.5×1019 atom/cm3 from SF6, but SF6 did not incorporate as much F into the films as CBrF3 (7.5×1020 atoms/cm3). Sulfur contamination was not found.

KW - basic sciences

KW - materials science

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U2 - 10.1109/pvsc.2009.5411291

DO - 10.1109/pvsc.2009.5411291

M3 - Paper

AN - SCOPUS:77951577999

SP - 2435

EP - 2438

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

Sulfur Hexafluoride (SF6) as Fluorine Dopant Precursor for Production of Fluorine Doped Tin Oxide Films by MOCVD

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