Sulfur Hexafluoride (SF6) as Fluorine Dopant Precursor for Production of Fluorine Doped Tin Oxide Films by MOCVD

Carrie Wyse, Robert Torres, Teresa Barnes, Marty Scott, Matt Young, Xiaonan Li, Tim Gessert

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations

Abstract

SF6 was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO2:F). SnO2:F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH 3)4) and O2 with SF6 between 500°C and 650°C and 10-65 mol% SF6. These were compared to un-doped SnO2 and SnO2:F grown with CBrF3. SF6 required higher thermal activation than CBrF3. High electron mobility (∼40 cm2N-s) and low resistance (6.5×10-3 Ω-cm) were achieved with SF6 at ≥600°C. at 550°C and below, mobility was on the order of 4 cm 2N-s. Carrier concentrations were on the order of 1019 cm-3, compared to 1020 cm-3 for CBrF 3 doped films. Optical transmission, reflectance and absorption spectra demonstrated transmittance of 80% in the visible spectrum. XRD showed SF6 generated films of different crystal structure than CBrF 3. SIMS Showed a uniform F concentration of 1.5×1019 atom/cm3 from SF6, but SF6 did not incorporate as much F into the films as CBrF3 (7.5×1020 atoms/cm3). Sulfur contamination was not found.

Original languageAmerican English
Pages2435-2438
Number of pages4
DOIs
StatePublished - 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 7 Jun 200912 Jun 2009

Conference

Conference2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA
Period7/06/0912/06/09

NREL Publication Number

  • NREL/CP-520-46005

Keywords

  • basic sciences
  • materials science

Fingerprint

Dive into the research topics of 'Sulfur Hexafluoride (SF6) as Fluorine Dopant Precursor for Production of Fluorine Doped Tin Oxide Films by MOCVD'. Together they form a unique fingerprint.

Cite this