Summary Abstract: Ge/Si Heterojunction Ohmic Contacts Formed by Molecular Beam Epitaxy

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Number of pages661
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Issue number2
    StatePublished - 1986

    Bibliographical note

    Work performed by Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado and Solar Energy Research Institute, Golden, Colorado

    NREL Publication Number

    • ACNR/JA-213-7444

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