@article{e7f5103a1c374ad49fe40e6f912be425,
title = "Summary Abstract: Ge/Si Heterojunction Ohmic Contacts Formed by Molecular Beam Epitaxy",
author = "NREL",
note = "Work performed by Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado and Solar Energy Research Institute, Golden, Colorado",
year = "1986",
doi = "10.1116/1.583593",
language = "American English",
volume = "4",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "0734-211X",
publisher = "AVS Science and Technology Society",
number = "2",
}