Suppress Carrier Recombination by Introducing Defects: The Case of Si Solar Cell

Pauls Stradins, Yuanyue Liu, Suhuai Wei, Huixiong Deng, Junwei Luo

Research output: Contribution to journalArticlepeer-review

30 Scopus Citations


Deep level defects are usually harmful to solar cells. Here we show that incorporation of selected deep level defects in the carrier-collecting region, however, can be utilized to improve the efficiency of optoelectronic devices. The designed defects can help the transport of the majority carriers by creating defect levels that are resonant with the band edge state, and/or reduce the concentration of minority carriers through Coulomb repulsion, thus suppressing the recombination at the carrier-collecting region. The selection process is demonstrated by using Si solar cell as an example. Our work enriches the understanding and utilization of the semiconductor defects.

Original languageAmerican English
Article numberArticle No. 022101
Number of pages4
JournalApplied Physics Letters
Issue number2
StatePublished - 11 Jan 2016

Bibliographical note

Publisher Copyright:
© 2016 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5J00-65690


  • bandgap
  • defect levels
  • passivation
  • solar cells
  • surface passivation


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