Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells: Article No. 030305

Kwangwook Park; Gunwu Ju; Byung Na; Hyeong-Yong Hwang; Young-Dahl Jho; NoSoung Myoung; Sang-Youp Yim; Hyung-jun Kim; Yong Lee

doi:10.7567/JJAP.57.030305

Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells: Article No. 030305

Kwangwook Park, Gunwu Ju, Byung Na, Hyeong-Yong Hwang, Young-Dahl Jho, NoSoung Myoung, Sang-Youp Yim, Hyung-jun Kim, Yong Lee

Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.

Original language	American English
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	57
Issue number	3
DOIs	https://doi.org/10.7567/JJAP.57.030305
State	Published - 2018

NREL Publication Number

NREL/JA-5K00-71137

Keywords

activation energy
band gap energy
carrier lifetime
defect traps
defects
high temperature
non-radiative recombinations
optical properties
potential fluctuations
semiconductor quantum wells
structural and optical properties
temperature dependent photoluminescences

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title = "Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells: Article No. 030305",

abstract = "We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.",

keywords = "activation energy, band gap energy, carrier lifetime, defect traps, defects, high temperature, non-radiative recombinations, optical properties, potential fluctuations, semiconductor quantum wells, structural and optical properties, temperature dependent photoluminescences",

author = "Kwangwook Park and Gunwu Ju and Byung Na and Hyeong-Yong Hwang and Young-Dahl Jho and NoSoung Myoung and Sang-Youp Yim and Hyung-jun Kim and Yong Lee",

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doi = "10.7567/JJAP.57.030305",

language = "American English",

volume = "57",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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publisher = "Japan Society of Applied Physics",

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T1 - Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells

T2 - Article No. 030305

AU - Park, Kwangwook

AU - Ju, Gunwu

AU - Na, Byung

AU - Hwang, Hyeong-Yong

AU - Jho, Young-Dahl

AU - Myoung, NoSoung

AU - Yim, Sang-Youp

AU - Kim, Hyung-jun

AU - Lee, Yong

PY - 2018

Y1 - 2018

N2 - We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.

AB - We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.

KW - activation energy

KW - band gap energy

KW - carrier lifetime

KW - defect traps

KW - defects

KW - high temperature

KW - non-radiative recombinations

KW - optical properties

KW - potential fluctuations

KW - semiconductor quantum wells

KW - structural and optical properties

KW - temperature dependent photoluminescences

U2 - 10.7567/JJAP.57.030305

DO - 10.7567/JJAP.57.030305

M3 - Article

SN - 0021-4922

VL - 57

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3

ER -

Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells: Article No. 030305

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Keywords

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