Suppression of Band Edge Migration at the p-GaInP2/H2O Interface Under Illumination via Catalysis

Ashish Bansal; John A. Turner

doi:10.1021/jp000387s

Suppression of Band Edge Migration at the p-GaInP2/H2O Interface Under Illumination via Catalysis

Ashish Bansal, John A. Turner

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

31 Scopus Citations

Abstract

The band edges of p-GaInP₂ are observed to migrate toward negative potentials during current flow under illumination in solutions with pH ranging from 1 to 14.5. The migration is not caused by a change in the pH of the semiconductor microenvironment but is a result of accumulation of photogenerated electrons at the p-GaInP₂/water interface due to poor interfacial kinetics. This less than optimal interfacial charge-transfer rate can be catalyzed by treating the surface with transition-metal ions (e.g., Ru^III, Rh^III, Co^III, Os^III) which results in a suppression of band edge migration. As compared to an unmodified p-GaInP₂ surface, the metal-ion treatment does not induce any appreciable band edge shift in the dark but effectively suppresses the band edge migration under illumination. Ru^III and Rh^III1 are found to act as better hydrogen-evolution catalysts than electrodeposited Pt.

Original language	American English
Pages (from-to)	6591-6598
Number of pages	8
Journal	Journal of Physical Chemistry B
Volume	104
Issue number	28
DOIs	https://doi.org/10.1021/jp000387s https://doi.org/10.1021/jp000387s
State	Published - 2000

NREL Publication Number

NREL/JA-590-27828

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title = "Suppression of Band Edge Migration at the p-GaInP2/H2O Interface Under Illumination via Catalysis",

abstract = "The band edges of p-GaInP2 are observed to migrate toward negative potentials during current flow under illumination in solutions with pH ranging from 1 to 14.5. The migration is not caused by a change in the pH of the semiconductor microenvironment but is a result of accumulation of photogenerated electrons at the p-GaInP2/water interface due to poor interfacial kinetics. This less than optimal interfacial charge-transfer rate can be catalyzed by treating the surface with transition-metal ions (e.g., RuIII, RhIII, CoIII, OsIII) which results in a suppression of band edge migration. As compared to an unmodified p-GaInP2 surface, the metal-ion treatment does not induce any appreciable band edge shift in the dark but effectively suppresses the band edge migration under illumination. RuIII and RhIII1 are found to act as better hydrogen-evolution catalysts than electrodeposited Pt.",

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T1 - Suppression of Band Edge Migration at the p-GaInP2/H2O Interface Under Illumination via Catalysis

AU - Bansal, Ashish

AU - Turner, John A.

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N2 - The band edges of p-GaInP2 are observed to migrate toward negative potentials during current flow under illumination in solutions with pH ranging from 1 to 14.5. The migration is not caused by a change in the pH of the semiconductor microenvironment but is a result of accumulation of photogenerated electrons at the p-GaInP2/water interface due to poor interfacial kinetics. This less than optimal interfacial charge-transfer rate can be catalyzed by treating the surface with transition-metal ions (e.g., RuIII, RhIII, CoIII, OsIII) which results in a suppression of band edge migration. As compared to an unmodified p-GaInP2 surface, the metal-ion treatment does not induce any appreciable band edge shift in the dark but effectively suppresses the band edge migration under illumination. RuIII and RhIII1 are found to act as better hydrogen-evolution catalysts than electrodeposited Pt.

AB - The band edges of p-GaInP2 are observed to migrate toward negative potentials during current flow under illumination in solutions with pH ranging from 1 to 14.5. The migration is not caused by a change in the pH of the semiconductor microenvironment but is a result of accumulation of photogenerated electrons at the p-GaInP2/water interface due to poor interfacial kinetics. This less than optimal interfacial charge-transfer rate can be catalyzed by treating the surface with transition-metal ions (e.g., RuIII, RhIII, CoIII, OsIII) which results in a suppression of band edge migration. As compared to an unmodified p-GaInP2 surface, the metal-ion treatment does not induce any appreciable band edge shift in the dark but effectively suppresses the band edge migration under illumination. RuIII and RhIII1 are found to act as better hydrogen-evolution catalysts than electrodeposited Pt.

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Suppression of Band Edge Migration at the p-GaInP2/H2O Interface Under Illumination via Catalysis

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