Surface Analytical Study of CuInSe2 Treated in Cd-Containing Partial Electrolyte Solution

Research output: Contribution to conferencePaper

Abstract

Junction formation in CuInSe2 (CIS) has been studied by exposing thin films and single-crystal samples to solutions containing NH4OH and CdSO4. The treated samples were analyzed by secondary ion mass spectroscopy to determine the amount and distribution of Cd deposited on the surface of the films. Cadmium is found to react with the surface for all the solution exposure times and temperaturesstudied. The reaction rapidly approaches the endpoint and remains relatively unchanged for subsequent solution exposure. Cadmium in-diffusion, as measured by secondary ion mass spectrometry, is obscured by topography effects in the thin-film samples and by ion-beam mixing and topography in the single-crystal sample.
Original languageAmerican English
Number of pages8
StatePublished - 1998
EventNational Center for Photovoltaics Program Review Meeting - Denver, Colorado
Duration: 8 Sep 199811 Sep 1998

Conference

ConferenceNational Center for Photovoltaics Program Review Meeting
CityDenver, Colorado
Period8/09/9811/09/98

NREL Publication Number

  • NREL/CP-520-25757

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