Surface and Interface Analysis of GaAs-Oxyfluorides

P. J. Ireland, O. Jamjoum, L. L. Kazmerski, R. K. Ahrenkiel, P. E. Russell

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations


AES, XPS, and SIMS analysis of the plasma grown oxyfluorides on GaAs are presented. These data indicate that the films are composed of three basic layers. Region 1 is a mixed As2O3, Ga2O3 glass with low concentrations of fluorine. In the second region, fluorine concentrations increase and a shoulder on the As-5d and Ga-3d peaks are observed. As2O3 and Ga2O3 are still the major constituents of the film. At the interface between the oxyfluoride glass and the substrate is a thin metallic As region. The difference between pure oxides and this oxyfluoride is the incorporation of fluorine in the films and lower concentrations of metallic As at the interface.

Original languageAmerican English
Pages (from-to)653-656
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
StatePublished - 1983

Bibliographical note

Work performed by Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana; Hughes Research, Malibu, California; and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

  • ACNR/JA-213-3915


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