Surface and Interface Analysis of GaAs-Oxyfluorides

P. J. Ireland; O. Jamjoum; L. L. Kazmerski; R. K. Ahrenkiel; P. E. Russell; W. Stanchina; J.F. Wagner

doi:10.1116/1.572202

Surface and Interface Analysis of GaAs-Oxyfluorides

P. J. Ireland
, O. Jamjoum
, L. L. Kazmerski
, R. K. Ahrenkiel
, P. E. Russell
, W. Stanchina
, J.F. Wagner

Materials Science

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

AES, XPS, and SIMS analysis of the plasma grown oxyfluorides on GaAs are presented. These data indicate that the films are composed of three basic layers. Region 1 is a mixed As₂O₃, Ga₂O₃ glass with low concentrations of fluorine. In the second region, fluorine concentrations increase and a shoulder on the As-5d and Ga-3d peaks are observed. As₂O₃ and Ga₂O₃ are still the major constituents of the film. At the interface between the oxyfluoride glass and the substrate is a thin metallic As region. The difference between pure oxides and this oxyfluoride is the incorporation of fluorine in the films and lower concentrations of metallic As at the interface.

Original language	American English
Pages (from-to)	653-656
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	1
Issue number	2
DOIs	https://doi.org/10.1116/1.572202 https://doi.org/10.1116/1.572202
State	Published - 1983

Bibliographical note

Work performed by Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana; Hughes Research, Malibu, California; and Solar Energy Research Institute, Golden, Colorado

NLR Publication Number

ACNR/JA-213-3915

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title = "Surface and Interface Analysis of GaAs-Oxyfluorides",

abstract = "AES, XPS, and SIMS analysis of the plasma grown oxyfluorides on GaAs are presented. These data indicate that the films are composed of three basic layers. Region 1 is a mixed As2O3, Ga2O3 glass with low concentrations of fluorine. In the second region, fluorine concentrations increase and a shoulder on the As-5d and Ga-3d peaks are observed. As2O3 and Ga2O3 are still the major constituents of the film. At the interface between the oxyfluoride glass and the substrate is a thin metallic As region. The difference between pure oxides and this oxyfluoride is the incorporation of fluorine in the films and lower concentrations of metallic As at the interface.",

author = "Ireland, \{P. J.\} and O. Jamjoum and Kazmerski, \{L. L.\} and Ahrenkiel, \{R. K.\} and Russell, \{P. E.\} and W. Stanchina and J.F. Wagner",

note = "Work performed by Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana; Hughes Research, Malibu, California; and Solar Energy Research Institute, Golden, Colorado",

year = "1983",

doi = "10.1116/1.572202",

language = "American English",

volume = "1",

pages = "653--656",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

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}

TY - JOUR

T1 - Surface and Interface Analysis of GaAs-Oxyfluorides

AU - Ireland, P. J.

AU - Jamjoum, O.

AU - Kazmerski, L. L.

AU - Ahrenkiel, R. K.

AU - Russell, P. E.

AU - Stanchina, W.

AU - Wagner, J.F.

N1 - Work performed by Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana; Hughes Research, Malibu, California; and Solar Energy Research Institute, Golden, Colorado

PY - 1983

Y1 - 1983

N2 - AES, XPS, and SIMS analysis of the plasma grown oxyfluorides on GaAs are presented. These data indicate that the films are composed of three basic layers. Region 1 is a mixed As2O3, Ga2O3 glass with low concentrations of fluorine. In the second region, fluorine concentrations increase and a shoulder on the As-5d and Ga-3d peaks are observed. As2O3 and Ga2O3 are still the major constituents of the film. At the interface between the oxyfluoride glass and the substrate is a thin metallic As region. The difference between pure oxides and this oxyfluoride is the incorporation of fluorine in the films and lower concentrations of metallic As at the interface.

AB - AES, XPS, and SIMS analysis of the plasma grown oxyfluorides on GaAs are presented. These data indicate that the films are composed of three basic layers. Region 1 is a mixed As2O3, Ga2O3 glass with low concentrations of fluorine. In the second region, fluorine concentrations increase and a shoulder on the As-5d and Ga-3d peaks are observed. As2O3 and Ga2O3 are still the major constituents of the film. At the interface between the oxyfluoride glass and the substrate is a thin metallic As region. The difference between pure oxides and this oxyfluoride is the incorporation of fluorine in the films and lower concentrations of metallic As at the interface.

UR - https://www.scopus.com/pages/publications/0020112705

U2 - 10.1116/1.572202

DO - 10.1116/1.572202

M3 - Article

AN - SCOPUS:0020112705

SN - 0734-2101

VL - 1

SP - 653

EP - 656

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2

ER -

Surface and Interface Analysis of GaAs-Oxyfluorides

Abstract

Bibliographical note

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