Surface and Interface Properties of Zn3P2 Solar Cells

L. L. Kazmerski, P. J. Ireland, A. Catalano

Research output: Contribution to journalArticlepeer-review

11 Scopus Citations


The compositional properties of Zn//3P//2 thin films are examined using surface analysis techniques. Relative sensitivity factors of S(Zn//L//M//M) equals 0. 29 and S(P//L//M//M) equals 0. 34 are determined for this semiconductor using AES standard spectra. The interfacial properties of the Mg/Zn//3P//2 thin-film solar cell are studied using AES depth-compositional profiling in conjunction with complementary SIMS and XPS data. Evidence is presented for the formation of Mg//3P//2 at the metal-semiconductor interface. This compound has a bandgap near that of Zn//3P//2, and the possible formation of a heterojunction as a result of the interfacial reaction is discussed.

Original languageAmerican English
Pages (from-to)368-371
Number of pages4
JournalJournal of vacuum science & technology
Issue number2
StatePublished - 1980
Externally publishedYes
EventProc of the Natl Symp of the Am Vac Soc, 27th, Pt 1 - Detroit, MI, Engl
Duration: 13 Oct 198017 Oct 1980

Bibliographical note

Work performed by Solar Energy Research Institute and the Institute of Energy Conversion, University of Delaware, Newark, Delaware

NREL Publication Number

  • ACNR/JA-213-4259


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