Surface and Interface Properties of Zn3P2 Solar Cells

L. L. Kazmerski; P. J. Ireland; A. Catalano

doi:10.1116/1.570787

Surface and Interface Properties of Zn3P2 Solar Cells

L. L. Kazmerski
, P. J. Ireland
, A. Catalano

Unknown

Research output: Contribution to journal › Article › peer-review

11 Scopus Citations

Abstract

The compositional properties of Zn//3P//2 thin films are examined using surface analysis techniques. Relative sensitivity factors of S(Zn//L//M//M) equals 0. 29 and S(P//L//M//M) equals 0. 34 are determined for this semiconductor using AES standard spectra. The interfacial properties of the Mg/Zn//3P//2 thin-film solar cell are studied using AES depth-compositional profiling in conjunction with complementary SIMS and XPS data. Evidence is presented for the formation of Mg//3P//2 at the metal-semiconductor interface. This compound has a bandgap near that of Zn//3P//2, and the possible formation of a heterojunction as a result of the interfacial reaction is discussed.

Original language	American English
Pages (from-to)	368-371
Number of pages	4
Journal	Journal of vacuum science & technology
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.570787 https://doi.org/10.1116/1.570787
State	Published - 1980
Externally published	Yes
Event	Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 1 - Detroit, MI, Engl Duration: 13 Oct 1980 → 17 Oct 1980

Bibliographical note

Work performed by Solar Energy Research Institute and the Institute of Energy Conversion, University of Delaware, Newark, Delaware

NLR Publication Number

ACNR/JA-213-4259

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title = "Surface and Interface Properties of Zn3P2 Solar Cells",

abstract = "The compositional properties of Zn//3P//2 thin films are examined using surface analysis techniques. Relative sensitivity factors of S(Zn//L//M//M) equals 0. 29 and S(P//L//M//M) equals 0. 34 are determined for this semiconductor using AES standard spectra. The interfacial properties of the Mg/Zn//3P//2 thin-film solar cell are studied using AES depth-compositional profiling in conjunction with complementary SIMS and XPS data. Evidence is presented for the formation of Mg//3P//2 at the metal-semiconductor interface. This compound has a bandgap near that of Zn//3P//2, and the possible formation of a heterojunction as a result of the interfacial reaction is discussed.",

author = "Kazmerski, \{L. L.\} and Ireland, \{P. J.\} and A. Catalano",

note = "Work performed by Solar Energy Research Institute and the Institute of Energy Conversion, University of Delaware, Newark, Delaware; Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 1 ; Conference date: 13-10-1980 Through 17-10-1980",

year = "1980",

doi = "10.1116/1.570787",

language = "American English",

volume = "18",

pages = "368--371",

journal = "Journal of vacuum science \& technology",

issn = "0022-5355",

publisher = "American Institute of Physics",

number = "2",

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TY - JOUR

T1 - Surface and Interface Properties of Zn3P2 Solar Cells

AU - Kazmerski, L. L.

AU - Ireland, P. J.

AU - Catalano, A.

N1 - Work performed by Solar Energy Research Institute and the Institute of Energy Conversion, University of Delaware, Newark, Delaware

PY - 1980

Y1 - 1980

N2 - The compositional properties of Zn//3P//2 thin films are examined using surface analysis techniques. Relative sensitivity factors of S(Zn//L//M//M) equals 0. 29 and S(P//L//M//M) equals 0. 34 are determined for this semiconductor using AES standard spectra. The interfacial properties of the Mg/Zn//3P//2 thin-film solar cell are studied using AES depth-compositional profiling in conjunction with complementary SIMS and XPS data. Evidence is presented for the formation of Mg//3P//2 at the metal-semiconductor interface. This compound has a bandgap near that of Zn//3P//2, and the possible formation of a heterojunction as a result of the interfacial reaction is discussed.

AB - The compositional properties of Zn//3P//2 thin films are examined using surface analysis techniques. Relative sensitivity factors of S(Zn//L//M//M) equals 0. 29 and S(P//L//M//M) equals 0. 34 are determined for this semiconductor using AES standard spectra. The interfacial properties of the Mg/Zn//3P//2 thin-film solar cell are studied using AES depth-compositional profiling in conjunction with complementary SIMS and XPS data. Evidence is presented for the formation of Mg//3P//2 at the metal-semiconductor interface. This compound has a bandgap near that of Zn//3P//2, and the possible formation of a heterojunction as a result of the interfacial reaction is discussed.

UR - https://www.scopus.com/pages/publications/0018986503

U2 - 10.1116/1.570787

DO - 10.1116/1.570787

M3 - Article

AN - SCOPUS:0018986503

SN - 0022-5355

VL - 18

SP - 368

EP - 371

JO - Journal of vacuum science & technology

JF - Journal of vacuum science & technology

IS - 2

T2 - Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 1

Y2 - 13 October 1980 through 17 October 1980

ER -

Surface and Interface Properties of Zn3P2 Solar Cells

Abstract

Bibliographical note

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