Surface Chemistry Exchange of Alloyed Germanium Nanocrystals: A Pathway Toward Conductive Group IV Nanocrystal Films

Daniel A. Ruddy; Peter T. Erslev; Susan E. Habas; Jason A. Seabold; Nathan R. Neale

doi:10.1021/jz3020875

Surface Chemistry Exchange of Alloyed Germanium Nanocrystals: A Pathway Toward Conductive Group IV Nanocrystal Films

Daniel A. Ruddy, Peter T. Erslev, Susan E. Habas, Jason A. Seabold, Nathan R. Neale

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

40 Scopus Citations

Abstract

We present an expansion of the mixed-valence iodide reduction method for the synthesis of Ge nanocrystals (NCs) to incorporate low levels (∼1 mol %) of groups III, IV, and V elements to yield main-group element-alloyed Ge NCs (Ge_1-xE_x NCs). Nearly every main-group element (E) that surrounds Ge on the periodic table (Al, P, Ga, As, In, Sn, and Sb) may be incorporated into Ge_1-xE_x NCs with remarkably high E incorporation into the product (>45% of E added to the reaction). Importantly, surface chemistry modification via ligand exchange allowed conductive films of Ge_1-xE_x NCs to be prepared, which exhibit conductivities over large distances (25 μm) relevant to optoelectronic device development of group IV NC thin films.

Original language	American English
Pages (from-to)	416-421
Number of pages	6
Journal	Journal of Physical Chemistry Letters
Volume	4
Issue number	3
DOIs	https://doi.org/10.1021/jz3020875 https://doi.org/10.1021/jz3020875
State	Published - 7 Feb 2013

NREL Publication Number

NREL/JA-5900-57449

Keywords

alloy
conductivity
germanium nanocrystal
ligand exchange
superlattice
surface modification

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title = "Surface Chemistry Exchange of Alloyed Germanium Nanocrystals: A Pathway Toward Conductive Group IV Nanocrystal Films",

abstract = "We present an expansion of the mixed-valence iodide reduction method for the synthesis of Ge nanocrystals (NCs) to incorporate low levels (∼1 mol %) of groups III, IV, and V elements to yield main-group element-alloyed Ge NCs (Ge1-xEx NCs). Nearly every main-group element (E) that surrounds Ge on the periodic table (Al, P, Ga, As, In, Sn, and Sb) may be incorporated into Ge1-xEx NCs with remarkably high E incorporation into the product (>45% of E added to the reaction). Importantly, surface chemistry modification via ligand exchange allowed conductive films of Ge1-xEx NCs to be prepared, which exhibit conductivities over large distances (25 μm) relevant to optoelectronic device development of group IV NC thin films.",

keywords = "alloy, conductivity, germanium nanocrystal, ligand exchange, superlattice, surface modification",

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AU - Ruddy, Daniel A.

AU - Erslev, Peter T.

AU - Habas, Susan E.

AU - Seabold, Jason A.

AU - Neale, Nathan R.

PY - 2013/2/7

Y1 - 2013/2/7

N2 - We present an expansion of the mixed-valence iodide reduction method for the synthesis of Ge nanocrystals (NCs) to incorporate low levels (∼1 mol %) of groups III, IV, and V elements to yield main-group element-alloyed Ge NCs (Ge1-xEx NCs). Nearly every main-group element (E) that surrounds Ge on the periodic table (Al, P, Ga, As, In, Sn, and Sb) may be incorporated into Ge1-xEx NCs with remarkably high E incorporation into the product (>45% of E added to the reaction). Importantly, surface chemistry modification via ligand exchange allowed conductive films of Ge1-xEx NCs to be prepared, which exhibit conductivities over large distances (25 μm) relevant to optoelectronic device development of group IV NC thin films.

AB - We present an expansion of the mixed-valence iodide reduction method for the synthesis of Ge nanocrystals (NCs) to incorporate low levels (∼1 mol %) of groups III, IV, and V elements to yield main-group element-alloyed Ge NCs (Ge1-xEx NCs). Nearly every main-group element (E) that surrounds Ge on the periodic table (Al, P, Ga, As, In, Sn, and Sb) may be incorporated into Ge1-xEx NCs with remarkably high E incorporation into the product (>45% of E added to the reaction). Importantly, surface chemistry modification via ligand exchange allowed conductive films of Ge1-xEx NCs to be prepared, which exhibit conductivities over large distances (25 μm) relevant to optoelectronic device development of group IV NC thin films.

KW - alloy

KW - conductivity

KW - germanium nanocrystal

KW - ligand exchange

KW - superlattice

KW - surface modification

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Surface Chemistry Exchange of Alloyed Germanium Nanocrystals: A Pathway Toward Conductive Group IV Nanocrystal Films

Abstract

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Keywords

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