Surface Chemistry Models for GaAs Epitaxial Growth and Hydride Cracking Using Reacting Flow Simulations: Article No. 115702

Malik Hassanaly, Hariswaran Sitaraman, Kevin Schulte, Aaron Ptak, John Simon, Kevin Udwary, Jacob Leach, Heather Splawn

Research output: Contribution to journalArticlepeer-review

1 Scopus Citations

Abstract

Hydride vapor phase epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrations of ultrafast growth rates (~500 µm/h) via uncracked hydrides are not well described by present models for the growth. Therefore, it is necessary to understand the kinetics of the growth process and its coupling with transport phenomena, so as to enable fast and uniform epitaxial growth. In this work, we derive a kinetic model using experimental data and integrate it into a computational fluid dynamics simulation of an HVPE growth reactor. We also modify an existing hydride cracking model that we validate against numerical simulations and experimental data. We show that the developed growth model and the improved cracking model are able to reproduce experimental growth measurements of GaAs in an existing HVPE system.
Original languageAmerican English
Number of pages14
JournalJournal of Applied Physics
Volume130
Issue number11
DOIs
StatePublished - 2021

NREL Publication Number

  • NREL/JA-2C00-80068

Keywords

  • adsorption kinetics
  • chemical vapor deposition
  • computational fluid dynamics
  • III-V semiconductors

Fingerprint

Dive into the research topics of 'Surface Chemistry Models for GaAs Epitaxial Growth and Hydride Cracking Using Reacting Flow Simulations: Article No. 115702'. Together they form a unique fingerprint.

Cite this