Surface Compensation of p-InP as Observed by Capacitance Dispersion

R. K. Ahrenkiel, P. Sheldon, D. Dunlavy, L. Roybal, R. E. Hayes

Research output: Contribution to journalArticlepeer-review

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Very strong capacitance-voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small-signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority-carrier profile in lightly doped or low mobility semiconductors.

Original languageAmerican English
Pages (from-to)675-676
Number of pages2
JournalApplied Physics Letters
Issue number7
StatePublished - 1983

NREL Publication Number

  • ACNR/JA-213-3581


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