Surface Compensation of p-InP as Observed by Capacitance Dispersion

R. K. Ahrenkiel; P. Sheldon; D. Dunlavy; L. Roybal; R. E. Hayes

doi:10.1063/1.94442

Surface Compensation of p-InP as Observed by Capacitance Dispersion

R. K. Ahrenkiel, P. Sheldon, D. Dunlavy, L. Roybal, R. E. Hayes

Materials Science

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Abstract

Very strong capacitance-voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small-signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority-carrier profile in lightly doped or low mobility semiconductors.

Original language	American English
Pages (from-to)	675-676
Number of pages	2
Journal	Applied Physics Letters
Volume	43
Issue number	7
DOIs	https://doi.org/10.1063/1.94442 https://doi.org/10.1063/1.94442
State	Published - 1983

NREL Publication Number

ACNR/JA-213-3581

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title = "Surface Compensation of p-InP as Observed by Capacitance Dispersion",

abstract = "Very strong capacitance-voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small-signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority-carrier profile in lightly doped or low mobility semiconductors.",

author = "Ahrenkiel, {R. K.} and P. Sheldon and D. Dunlavy and L. Roybal and Hayes, {R. E.}",

year = "1983",

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AU - Ahrenkiel, R. K.

AU - Sheldon, P.

AU - Dunlavy, D.

AU - Roybal, L.

AU - Hayes, R. E.

PY - 1983

Y1 - 1983

N2 - Very strong capacitance-voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small-signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority-carrier profile in lightly doped or low mobility semiconductors.

AB - Very strong capacitance-voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small-signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority-carrier profile in lightly doped or low mobility semiconductors.

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DO - 10.1063/1.94442

M3 - Article

AN - SCOPUS:3342882658

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SP - 675

EP - 676

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Surface Compensation of p-InP as Observed by Capacitance Dispersion

Abstract

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