Surface Compensation of p-InP as Observed by Capacitance Dispersion

R. K. Ahrenkiel; P. Sheldon; D. Dunlavy; L. Roybal; R. E. Hayes

doi:10.1063/1.94442

Surface Compensation of p-InP as Observed by Capacitance Dispersion

R. K. Ahrenkiel
, P. Sheldon
, D. Dunlavy
, L. Roybal
, R. E. Hayes

Materials Science

Research output: Contribution to journal › Article › peer-review

7 Scopus Citations

Abstract

Very strong capacitance-voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small-signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority-carrier profile in lightly doped or low mobility semiconductors.

Original language	American English
Pages (from-to)	675-676
Number of pages	2
Journal	Applied Physics Letters
Volume	43
Issue number	7
DOIs	https://doi.org/10.1063/1.94442 https://doi.org/10.1063/1.94442
State	Published - 1983

NLR Publication Number

ACNR/JA-213-3581

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title = "Surface Compensation of p-InP as Observed by Capacitance Dispersion",

abstract = "Very strong capacitance-voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small-signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority-carrier profile in lightly doped or low mobility semiconductors.",

author = "Ahrenkiel, \{R. K.\} and P. Sheldon and D. Dunlavy and L. Roybal and Hayes, \{R. E.\}",

year = "1983",

doi = "10.1063/1.94442",

language = "American English",

volume = "43",

pages = "675--676",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Surface Compensation of p-InP as Observed by Capacitance Dispersion

AU - Ahrenkiel, R. K.

AU - Sheldon, P.

AU - Dunlavy, D.

AU - Roybal, L.

AU - Hayes, R. E.

PY - 1983

Y1 - 1983

N2 - Very strong capacitance-voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small-signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority-carrier profile in lightly doped or low mobility semiconductors.

AB - Very strong capacitance-voltage dispersive effects are observed in mercury/indium phosphide Schottky diodes. These effects are related to a partially compensated region at the surface for which the Debye length is relatively large. The small-signal capacitance is indicative of a critical dielectric relaxation time exceeding the period of the ac probe. This effect may be used to characterize the majority-carrier profile in lightly doped or low mobility semiconductors.

UR - https://www.scopus.com/pages/publications/3342882658

U2 - 10.1063/1.94442

DO - 10.1063/1.94442

M3 - Article

AN - SCOPUS:3342882658

SN - 0003-6951

VL - 43

SP - 675

EP - 676

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Surface Compensation of p-InP as Observed by Capacitance Dispersion

Abstract

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