Surface-Layer Band Gap Widening in Cu(In,Ga)Se2 Thin Films

M. J. Romero, K. M. Jones, J. AbuShama, Y. Yan, M. M. Al-Jassim, R. Noufi

Research output: Contribution to journalArticlepeer-review

38 Scopus Citations


The experimental confirmation of the existence of a surface layer of wide band gap formed in Cu(In,Ga)Se 2 (CIGS) thin films was discussed. Saturation of the q-DAP emission was observed indicating the presence of positive offsets at both the valence band and conduction band. The saturation was attributed to the surface layer representing a barrier for the diffusion of both minority and majority carriers. It was found that The analysis of the emission spectrum of CIGS films using cathodoluminescence spectroscopy, spectrum imaging and transmission electron microscopy was also discussed.

Original languageAmerican English
Pages (from-to)4731-4733
Number of pages3
JournalApplied Physics Letters
Issue number23
StatePublished - 8 Dec 2003

NREL Publication Number

  • NREL/JA-520-34311


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