Surface-Layer Band Gap Widening in Cu(In,Ga)Se2 Thin Films

M. J. Romero; K. M. Jones; J. AbuShama; Y. Yan; M. M. Al-Jassim; R. Noufi

doi:10.1063/1.1631396

Surface-Layer Band Gap Widening in Cu(In,Ga)Se2 Thin Films

M. J. Romero, K. M. Jones, J. AbuShama, Y. Yan, M. M. Al-Jassim, R. Noufi

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

38 Scopus Citations

Abstract

The experimental confirmation of the existence of a surface layer of wide band gap formed in Cu(In,Ga)Se ₂ (CIGS) thin films was discussed. Saturation of the q-DAP emission was observed indicating the presence of positive offsets at both the valence band and conduction band. The saturation was attributed to the surface layer representing a barrier for the diffusion of both minority and majority carriers. It was found that The analysis of the emission spectrum of CIGS films using cathodoluminescence spectroscopy, spectrum imaging and transmission electron microscopy was also discussed.

Original language	American English
Pages (from-to)	4731-4733
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1063/1.1631396 https://doi.org/10.1063/1.1631396
State	Published - 8 Dec 2003

NREL Publication Number

NREL/JA-520-34311

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abstract = "The experimental confirmation of the existence of a surface layer of wide band gap formed in Cu(In,Ga)Se 2 (CIGS) thin films was discussed. Saturation of the q-DAP emission was observed indicating the presence of positive offsets at both the valence band and conduction band. The saturation was attributed to the surface layer representing a barrier for the diffusion of both minority and majority carriers. It was found that The analysis of the emission spectrum of CIGS films using cathodoluminescence spectroscopy, spectrum imaging and transmission electron microscopy was also discussed.",

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AU - Jones, K. M.

AU - AbuShama, J.

AU - Yan, Y.

AU - Al-Jassim, M. M.

AU - Noufi, R.

PY - 2003/12/8

Y1 - 2003/12/8

N2 - The experimental confirmation of the existence of a surface layer of wide band gap formed in Cu(In,Ga)Se 2 (CIGS) thin films was discussed. Saturation of the q-DAP emission was observed indicating the presence of positive offsets at both the valence band and conduction band. The saturation was attributed to the surface layer representing a barrier for the diffusion of both minority and majority carriers. It was found that The analysis of the emission spectrum of CIGS films using cathodoluminescence spectroscopy, spectrum imaging and transmission electron microscopy was also discussed.

AB - The experimental confirmation of the existence of a surface layer of wide band gap formed in Cu(In,Ga)Se 2 (CIGS) thin films was discussed. Saturation of the q-DAP emission was observed indicating the presence of positive offsets at both the valence band and conduction band. The saturation was attributed to the surface layer representing a barrier for the diffusion of both minority and majority carriers. It was found that The analysis of the emission spectrum of CIGS films using cathodoluminescence spectroscopy, spectrum imaging and transmission electron microscopy was also discussed.

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U2 - 10.1063/1.1631396

DO - 10.1063/1.1631396

M3 - Article

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SP - 4731

EP - 4733

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Surface-Layer Band Gap Widening in Cu(In,Ga)Se2 Thin Films

Abstract

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