Abstract
In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.
Original language | American English |
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Patent number | 9,722,111 |
Filing date | 1/08/17 |
State | Published - 2017 |
NREL Publication Number
- NREL/PT-5K00-69106
Keywords
- CdTe devices
- surface passivation