Surface Recombination Velocity and Lifetime in InP Measured by Transient Microwave Reflectance

Surface Recombination Velocity and Lifetime in InP Measured by Transient Microwave Reflectance

Research output: Contribution to conference › Paper

Original language	American English
Pages	404-408
Number of pages	5
State	Published - 1990
Event	Twenty First IEEE Photovoltaic Specialists Conference - 1990 - Kissimmee, Florida Duration: 21 May 1990 → 25 May 1990

Conference

Conference	Twenty First IEEE Photovoltaic Specialists Conference - 1990
City	Kissimmee, Florida
Period	21/05/90 → 25/05/90

Bibliographical note

Work performed by Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

NREL Publication Number

ACNR/CP-210-12258

Cite this

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title = "Surface Recombination Velocity and Lifetime in InP Measured by Transient Microwave Reflectance",

author = "NREL",

note = "Work performed by Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York; Twenty First IEEE Photovoltaic Specialists Conference - 1990 ; Conference date: 21-05-1990 Through 25-05-1990",

year = "1990",

language = "American English",

pages = "404--408",

}

TY - CONF

T1 - Surface Recombination Velocity and Lifetime in InP Measured by Transient Microwave Reflectance

AU - NREL, null

N1 - Work performed by Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

PY - 1990

Y1 - 1990

M3 - Paper

SP - 404

EP - 408

T2 - Twenty First IEEE Photovoltaic Specialists Conference - 1990

Y2 - 21 May 1990 through 25 May 1990

ER -