Surface-Related Optical Anisotropy of GaInP, InP, and GaP

J. S. Luo, J. F. Geisz, J. M. Olson, Meng Chyi Wu

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We have studied the optical anisotropy induced by the (0 0 1) surface reconstruction of GaInP, InP, and GaP annealed under various gas environments in an atmospheric-pressure metal-organic chemical vapor deposition system using reflectance difference spectroscopy (RDS). The RD spectra of InP under a PH3 partial pressure of 10 Torr in a carrier of H2 between 500°C and 400°C are consistent with a (2 × 1) surface reconstruction. As the temperature of the InP is lowered to 200°C under PH3, the signature of the RD spectrum changes. If the flow of PH3 is removed when the InP cools to 300°C, the RD spectrum remains consistent with the (2 × 1) surface reconstruction down to room temperature. When InP is annealed at 400°C in hydrogen, the RD spectrum becomes consistent with a (2 × 4) surface reconstruction. The temperature-dependent RD spectra of GaInP are very similar to those of InP. The RD spectra of GaP reveal that the P-terminated surface of GaP observed at high temperatures is more stable then either InP or GaInP surfaces in the absence of PH3. The features of these surface-related RD spectra are quickly quenched in air and, under some conditions, nitrogen. This observation is important for studies of bulk-related, ordering-induced optical anisotropy in GaInP.

Original languageAmerican English
Pages (from-to)558-563
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - 1997

NREL Publication Number

  • NREL/JA-520-23891


  • Reflectance difference spectroscopy


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