Surface Roughening During Plasma-Enhanced Chemical-Vapor Deposition of Hydrogenated Amorphous Silicon on Crystal Silicon Substrates

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Abstract

The morphology of a series of thin films of hydrogenated amorphous silicon (a-Si:H) grown by plasma-enhanced chemical-vapor deposition (PECVD) is studied using scanning tunneling microscopy. The substrates were atomically flat, oxide-free, single-crystal silicon. Films were grown in a PECVD chamber directly connected to a surface analysis chamber with no air exposure between growth andmeasurement. The homogeneous roughness of the films increases with film thickness. The quantification of this roughening is achieved by calcullation of both rms roughness and lateral correlation lengths of the a-Si:H film surface from the height difference correlation functions of the measured topographs. Homogeneous roughening occurs over the film surface due to the collective baehavior of theflux of depositing radical species and their interactions with the growth surface.
Original languageAmerican English
Pages (from-to)4243-4250
Number of pages8
JournalPhysical Review B
Volume56
Issue number7
DOIs
StatePublished - 1997

Bibliographical note

Work performed by JILA, National Institute of Standards and Technology, and University of Colorado, Boulder, Colorado

NREL Publication Number

  • NREL/JA-520-25325

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