Abstract
Scanning tunneling microscope (STM) images of arsine-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed, and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call 'single-row' steps and 'double-row' steps. In this paper we propose a model for a double-row step createdby annealing a vicinal Ge(100) substrate under an arsine flux in a metal-organic chemical vapor deposition (MOCVD) chamber.
Original language | American English |
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Number of pages | 8 |
State | Published - 1998 |
Event | National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998 |
Conference
Conference | National Center for Photovoltaics Program Review Meeting |
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City | Denver, Colorado |
Period | 8/09/98 → 11/09/98 |
NREL Publication Number
- NREL/CP-520-25747