Surface Science in an MOCVD Environment: Arsenic on Vicinal Ge(100)

Research output: Contribution to conferencePaper

Abstract

Scanning tunneling microscope (STM) images of arsine-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed, and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call 'single-row' steps and 'double-row' steps. In this paper we propose a model for a double-row step createdby annealing a vicinal Ge(100) substrate under an arsine flux in a metal-organic chemical vapor deposition (MOCVD) chamber.
Original languageAmerican English
Number of pages8
StatePublished - 1998
EventNational Center for Photovoltaics Program Review Meeting - Denver, Colorado
Duration: 8 Sep 199811 Sep 1998

Conference

ConferenceNational Center for Photovoltaics Program Review Meeting
CityDenver, Colorado
Period8/09/9811/09/98

NREL Publication Number

  • NREL/CP-520-25747

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