Surface Science in an MOCVD Environment: Arsenic on Vicinal Ge(100)

Surface Science in an MOCVD Environment: Arsenic on Vicinal Ge(100)

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Abstract

Scanning tunneling microscope (STM) images of arsine-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed, and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call 'single-row' steps and 'double-row' steps. In this paper we propose a model for a double-row step createdby annealing a vicinal Ge(100) substrate under an arsine flux in a metal-organic chemical vapor deposition (MOCVD) chamber.

Original language	American English
Number of pages	8
State	Published - 1998
Event	National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998

Conference

Conference	National Center for Photovoltaics Program Review Meeting
City	Denver, Colorado
Period	8/09/98 → 11/09/98

NREL Publication Number

NREL/CP-520-25747

Access to Document

https://www.nrel.gov/docs/fy99osti/25747.pdf

Cite this

@conference{635293a624f84749af657d1e3a4c3050,

title = "Surface Science in an MOCVD Environment: Arsenic on Vicinal Ge(100)",

abstract = "Scanning tunneling microscope (STM) images of arsine-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed, and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call 'single-row' steps and 'double-row' steps. In this paper we propose a model for a double-row step createdby annealing a vicinal Ge(100) substrate under an arsine flux in a metal-organic chemical vapor deposition (MOCVD) chamber.",

author = "NREL",

year = "1998",

language = "American English",

note = "National Center for Photovoltaics Program Review Meeting ; Conference date: 08-09-1998 Through 11-09-1998",

}

TY - CONF

T1 - Surface Science in an MOCVD Environment: Arsenic on Vicinal Ge(100)

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - Scanning tunneling microscope (STM) images of arsine-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed, and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call 'single-row' steps and 'double-row' steps. In this paper we propose a model for a double-row step createdby annealing a vicinal Ge(100) substrate under an arsine flux in a metal-organic chemical vapor deposition (MOCVD) chamber.

AB - Scanning tunneling microscope (STM) images of arsine-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed, and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call 'single-row' steps and 'double-row' steps. In this paper we propose a model for a double-row step createdby annealing a vicinal Ge(100) substrate under an arsine flux in a metal-organic chemical vapor deposition (MOCVD) chamber.

M3 - Paper

T2 - National Center for Photovoltaics Program Review Meeting

Y2 - 8 September 1998 through 11 September 1998

ER -

Surface Science in an MOCVD Environment: Arsenic on Vicinal Ge(100)

Abstract

Conference

NREL Publication Number

Access to Document

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Cite this