Abstract
Solar cells have been fabricated with partial electrolyte treatments of CuInGaSe2 (CIGS) thin-film absorbers in lieu of a CdS layer. Treatment of the absorbers in a containing Cd or Zn solution is shown to produce conditions under which efficient solar cells can be fabricated. A similar effect is also observed in CuInGaSSe2 (CIGSS) graded-bandgap absorbers. These observations can be explained bythe ability of Cd and Zn to produce n-type doping or inversion in the surface region. We also provide a brief review of similar work done elsewhere and identify directions for future investigations.
| Original language | American English |
|---|---|
| Number of pages | 9 |
| State | Published - 2002 |
| Event | 13th International Conference on Ternary and Multinary Compounds - Paris, France Duration: 14 Oct 2002 → 18 Oct 2002 |
Conference
| Conference | 13th International Conference on Ternary and Multinary Compounds |
|---|---|
| City | Paris, France |
| Period | 14/10/02 → 18/10/02 |
NREL Publication Number
- NREL/CP-520-32950
Keywords
- CD
- chalcopyrites
- CuInGaSe2 (CIGS)
- current voltage
- electrical properties
- n-type doping
- partial electrolyte treatment
- PV
- solar cells
- stoichiometry
- thin film
- window layer property
- Zn
