Surfaces and Interfaces Governing the OMVPE Growth of APD-Free GaP on AsH3-Cleaned Vicinal Si(100)

William E. McMahon, Emily L. Warren, Alan E. Kibbler, Ryan M. France, Andrew G. Norman, Robert C. Reedy, Jerry M. Olson, Adele C. Tamboli, Paul Stradins

Research output: Contribution to journalArticlepeer-review

12 Scopus Citations


Direct growth of GaP on Si enables the integration of III–V and Si optoelectronic devices for a wide variety of applications, and has therefore been the subject of much research for many decades. Most of this effort has been directed toward overcoming the two main technical challenges: 1) removing atmospheric oxygen and carbon contamination and 2) establishing the conditions needed for “APD-free” III–V epitaxy (i.e., without antiphase domains). We have developed an OMVPE process for APD-free GaP growth on Si which overcomes both challenges by using AsH3 to clean and prepare the Si surface in situ at a relatively low temperature. This process is based upon a very brief “AsH3-cleaning” step which simultaneously removes atmospheric contamination (thereby eliminating the need for Si regrowth) and creates a single-domain As-terminated Si surface. Here we discuss the key process steps using results from a suite of analysis tools.

Original languageAmerican English
Pages (from-to)235-239
Number of pages5
JournalJournal of Crystal Growth
StatePublished - 15 Oct 2016

Bibliographical note

Publisher Copyright:
© 2016

NREL Publication Number

  • NREL/JA-5J00-65166


  • nucleation
  • organometallic vapor phase epitaxy
  • semiconducting III-V materials
  • semiconducting silicon
  • solar cells
  • surface structure


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