Surfactant-Induced Chemical Ordering of GaAsN:Bi

Andrew Norman, J. Occena, T. Jen, B. Carter, T. Simpson, H. Lu, R. Goldman

Research output: Contribution to journalArticlepeer-review

10 Scopus Citations


We have examined the influence of an incorporating surfactant on chemical ordering in GaAsN:Bi alloys. Epitaxy with a (2 × 1) reconstruction leads to the formation of GaAsN alloys, while the introduction of a Bi flux induces long-range chemical ordering of the {111} planes of GaAsN:Bi. We propose a mechanism in which Bi enhances the alignment of dimer rows along the [110] direction, facilitating N incorporation beneath surface dimers and Bi incorporation between dimer rows to form alternating N-rich and Bi-rich {111} planes. These findings suggest a route to tailoring the local atomic environment of N and Bi atoms in a wide range of emerging dilute nitride-bismide alloys.

Original languageAmerican English
Article number211602
Number of pages5
JournalApplied Physics Letters
Issue number21
StatePublished - 19 Nov 2018

Bibliographical note

Publisher Copyright:
© 2018 Author(s).

NREL Publication Number

  • NREL/JA-5K00-72462


  • chemical ordering
  • dilute III-nitride bismide alloys
  • III-V semiconductors


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