Symmetric Relaxation Around Interstitial 3d Impurities in Silicon

Symmetric Relaxation Around Interstitial 3d Impurities in Silicon

Research output: Contribution to conference › Paper

Original language	American English
Pages	729-732
Number of pages	4
State	Published - 1985
Event	17th International Conference on the Physics of Semiconductors - San Francisco, California Duration: 6 Aug 1984 → 10 Aug 1984

Conference

Conference	17th International Conference on the Physics of Semiconductors
City	San Francisco, California
Period	6/08/84 → 10/08/84

Bibliographical note

Work performed by Department of Theoretical Physics, University of Lund, Lund, Sweden and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/CP-212-6020

Cite this

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title = "Symmetric Relaxation Around Interstitial 3d Impurities in Silicon",

author = "NREL",

note = "Work performed by Department of Theoretical Physics, University of Lund, Lund, Sweden and Solar Energy Research Institute, Golden, Colorado; 17th International Conference on the Physics of Semiconductors ; Conference date: 06-08-1984 Through 10-08-1984",

year = "1985",

language = "American English",

pages = "729--732",

}

TY - CONF

T1 - Symmetric Relaxation Around Interstitial 3d Impurities in Silicon

AU - NREL, null

N1 - Work performed by Department of Theoretical Physics, University of Lund, Lund, Sweden and Solar Energy Research Institute, Golden, Colorado

PY - 1985

Y1 - 1985

M3 - Paper

SP - 729

EP - 732

T2 - 17th International Conference on the Physics of Semiconductors

Y2 - 6 August 1984 through 10 August 1984

ER -