Symmetry of GaAs1-xNx Conduction-Band Minimum Probed by Resonant Raman Scattering

M. J. Seong; H. M. Cheong; S. Yoon; J. F. Geisz; A. Mascarenhas; M. J. Seong; H. M. Cheong; S. Yoon; J. F. Geisz; A. Mascarenhas

doi:10.1103/PhysRevB.67.153301

Symmetry of GaAs1-xNx Conduction-Band Minimum Probed by Resonant Raman Scattering

M. J. Seong, H. M. Cheong, S. Yoon, J. F. Geisz, A. Mascarenhas, M. J. Seong, H. M. Cheong, S. Yoon, J. F. Geisz, A. Mascarenhas

Chemistry and Nanoscience

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Abstract

The nature of the conduction-band minimum of (formula presented) (formula presented) is probed by performing resonant Raman scattering (RRS) on thin layers of (formula presented) epitaxially grown on Ge substrates. Strong resonance enhancement of the LO-phonon Raman intensity is observed with excitation energies near the (formula presented) as well as (formula presented) transitions. However, in contrast to the distinct LO-phonon linewidth resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the (formula presented) transition, respectively, we have not observed any resonant LO-phonon linewidth broadening or activation of sharp zone-boundary phonons near the (formula presented) transition. The observed RRS results reveal that the conduction-band minimum of (formula presented) predominantly consists of the delocalized GaAs bulklike states of (formula presented) symmetry.

Original language	American English
Article number	153301
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.67.153301 https://doi.org/10.1103/PhysRevB.67.153301
State	Published - 2 Apr 2003

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NREL/JA-590-34474

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Seong, M. J., Cheong, H. M., Yoon, S., Geisz, J. F., Mascarenhas, A., Seong, M. J., Cheong, H. M., Yoon, S., Geisz, J. F., & Mascarenhas, A. (2003). Symmetry of GaAs1-xNx Conduction-Band Minimum Probed by Resonant Raman Scattering. Physical Review B - Condensed Matter and Materials Physics, 67(15), Article 153301. https://doi.org/10.1103/PhysRevB.67.153301, https://doi.org/10.1103/PhysRevB.67.153301

@article{4fd376d3485c4fc5a14727ab1e1bb1a9,

title = "Symmetry of GaAs1-xNx Conduction-Band Minimum Probed by Resonant Raman Scattering",

abstract = "The nature of the conduction-band minimum of (formula presented) (formula presented) is probed by performing resonant Raman scattering (RRS) on thin layers of (formula presented) epitaxially grown on Ge substrates. Strong resonance enhancement of the LO-phonon Raman intensity is observed with excitation energies near the (formula presented) as well as (formula presented) transitions. However, in contrast to the distinct LO-phonon linewidth resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the (formula presented) transition, respectively, we have not observed any resonant LO-phonon linewidth broadening or activation of sharp zone-boundary phonons near the (formula presented) transition. The observed RRS results reveal that the conduction-band minimum of (formula presented) predominantly consists of the delocalized GaAs bulklike states of (formula presented) symmetry.",

author = "Seong, {M. J.} and Cheong, {H. M.} and S. Yoon and Geisz, {J. F.} and A. Mascarenhas and Seong, {M. J.} and Cheong, {H. M.} and S. Yoon and Geisz, {J. F.} and A. Mascarenhas",

year = "2003",

month = apr,

day = "2",

doi = "10.1103/PhysRevB.67.153301",

language = "American English",

volume = "67",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "15",

}

Seong, MJ, Cheong, HM, Yoon, S, Geisz, JF, Mascarenhas, A, Seong, MJ, Cheong, HM, Yoon, S, Geisz, JF & Mascarenhas, A 2003, 'Symmetry of GaAs1-xNx Conduction-Band Minimum Probed by Resonant Raman Scattering', Physical Review B - Condensed Matter and Materials Physics, vol. 67, no. 15, 153301. https://doi.org/10.1103/PhysRevB.67.153301, https://doi.org/10.1103/PhysRevB.67.153301

TY - JOUR

T1 - Symmetry of GaAs1-xNx Conduction-Band Minimum Probed by Resonant Raman Scattering

AU - Seong, M. J.

AU - Cheong, H. M.

AU - Yoon, S.

AU - Geisz, J. F.

AU - Mascarenhas, A.

AU - Seong, M. J.

AU - Cheong, H. M.

AU - Yoon, S.

AU - Geisz, J. F.

AU - Mascarenhas, A.

PY - 2003/4/2

Y1 - 2003/4/2

N2 - The nature of the conduction-band minimum of (formula presented) (formula presented) is probed by performing resonant Raman scattering (RRS) on thin layers of (formula presented) epitaxially grown on Ge substrates. Strong resonance enhancement of the LO-phonon Raman intensity is observed with excitation energies near the (formula presented) as well as (formula presented) transitions. However, in contrast to the distinct LO-phonon linewidth resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the (formula presented) transition, respectively, we have not observed any resonant LO-phonon linewidth broadening or activation of sharp zone-boundary phonons near the (formula presented) transition. The observed RRS results reveal that the conduction-band minimum of (formula presented) predominantly consists of the delocalized GaAs bulklike states of (formula presented) symmetry.

AB - The nature of the conduction-band minimum of (formula presented) (formula presented) is probed by performing resonant Raman scattering (RRS) on thin layers of (formula presented) epitaxially grown on Ge substrates. Strong resonance enhancement of the LO-phonon Raman intensity is observed with excitation energies near the (formula presented) as well as (formula presented) transitions. However, in contrast to the distinct LO-phonon linewidth resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the (formula presented) transition, respectively, we have not observed any resonant LO-phonon linewidth broadening or activation of sharp zone-boundary phonons near the (formula presented) transition. The observed RRS results reveal that the conduction-band minimum of (formula presented) predominantly consists of the delocalized GaAs bulklike states of (formula presented) symmetry.

UR - http://www.scopus.com/inward/record.url?scp=85038972275&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.67.153301

DO - 10.1103/PhysRevB.67.153301

M3 - Article

AN - SCOPUS:85038972275

SN - 1098-0121

VL - 67

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - 153301

ER -

Symmetry of GaAs1-xNx Conduction-Band Minimum Probed by Resonant Raman Scattering

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