Synthesis and Characterization of Band Gap-Reduced ZnO:N and ZnO:(Al,N) Films for Photoelectrochemical Water Splitting

Sudhakar Shet; Kwang Soon Ahn; Todd Deutsch; He Ii Wang; Nuggehalli Ravindra; Yanfa Yan; John Turner; Mowafak Al-Jassim

doi:10.1557/jmr.2010.0017

Synthesis and Characterization of Band Gap-Reduced ZnO:N and ZnO:(Al,N) Films for Photoelectrochemical Water Splitting

Sudhakar Shet, Kwang Soon Ahn, Todd Deutsch, He Ii Wang, Nuggehalli Ravindra, Yanfa Yan, John Turner, Mowafak Al-Jassim

Research output: Contribution to journal › Article › peer-review

66 Scopus Citations

Abstract

ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.

Original language	American English
Pages (from-to)	69-75
Number of pages	7
Journal	Journal of Materials Research
Volume	25
Issue number	1
DOIs	https://doi.org/10.1557/jmr.2010.0017 https://doi.org/10.1557/jmr.2010.0017
State	Published - 2010

NREL Publication Number

NREL/JA-520-45859

Keywords

energy generation
grain size
microstructure

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title = "Synthesis and Characterization of Band Gap-Reduced ZnO:N and ZnO:(Al,N) Films for Photoelectrochemical Water Splitting",

abstract = "ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.",

keywords = "energy generation, grain size, microstructure",

author = "Sudhakar Shet and Ahn, {Kwang Soon} and Todd Deutsch and Wang, {He Ii} and Nuggehalli Ravindra and Yanfa Yan and John Turner and Mowafak Al-Jassim",

year = "2010",

doi = "10.1557/jmr.2010.0017",

language = "American English",

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pages = "69--75",

journal = "Journal of Materials Research",

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T1 - Synthesis and Characterization of Band Gap-Reduced ZnO:N and ZnO:(Al,N) Films for Photoelectrochemical Water Splitting

AU - Shet, Sudhakar

AU - Ahn, Kwang Soon

AU - Deutsch, Todd

AU - Wang, He Ii

AU - Ravindra, Nuggehalli

AU - Yan, Yanfa

AU - Turner, John

AU - Al-Jassim, Mowafak

PY - 2010

Y1 - 2010

N2 - ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.

AB - ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.

KW - energy generation

KW - grain size

KW - microstructure

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U2 - 10.1557/jmr.2010.0017

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Synthesis and Characterization of Band Gap-Reduced ZnO:N and ZnO:(Al,N) Films for Photoelectrochemical Water Splitting

Abstract

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Keywords

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